# US 2021/0082702 A1 · Semiconductor device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0082702 A1 - Document ID: US20210082702A1 - Status: Published application - Kind: A1 - Application number: 17/033,925 - Filed: 2020-09-28 - Published: 2021-03-18 - Earliest claimed: 2018-10-18 - Assignees: Fuji Electric Co., Ltd. - Applicants: Fuji Electric Co., Ltd. - Inventors: Yasunori AGATA; Takashi YOSHIMURA; Hiroshi TAKISHITA; Misaki MEGURO; Naoko KODAMA; Yoshihiro IKURA; Seiji NOGUCHI; Yuichi HARADA; Yosuke SAKURAI - Web page: https://patentgrep.com/patent/US20210082702A1 ## CPC - H10P 32/18: {Diffusion lifetime killers} - H10D 8/422: {PN diodes having the PN junctions in mesas} - H10D 12/038: {having a recessed gate, e.g. trench-gate IGBTs} - H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs} - H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions} - H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)} - H10D 62/112: {for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers} - H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices} - H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)} - H10D 62/53: the imperfections being within the semiconductor body - H10D 62/60: Impurity distributions or concentrations - H10D 64/112: {comprising multiple field plate segments} - H10D 84/617: {Combinations of vertical BJTs and only diodes} - H10P 30/204: {into Group IV semiconductors} - H10P 30/208: {of electrically inactive species} - H10P 30/214: {Recoil-implantation} - H10P 32/171: {being group IV material} - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided. ## Claims ### Claim 1 A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface, wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction of the semiconductor substrate connecting the upper surface and the lower surface, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface, wherein each concentration peak comprises an upward slope in which a concentration value increases from the lower surface in the direction of the upper surface, wherein a value in which a gradient of the upward slope of the second donor concentration peak is standardized by a gradient of the upward slope of the second hydrogen concentration peak is smaller than a value in which a gradient of the upward slope of the first donor concentration peak is standardized by a gradient of the upward slope of the first hydrogen concentration peak. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein each concentration peak comprises a downward slope in which a concentration value decreases from the lower surface in the direction of the upper surface, wherein at the second hydrogen concentration peak, a gradient of the upward slope is smaller than a gradient of the downward slope. ### Claim 3 (depends on 1) The semiconductor device of claim 1, wherein each concentration peak comprises a downward slope in which a concentration value decreases from the lower surface in the direction of the upper surface, wherein at the second donor concentration peak, a gradient of the upward slope is smaller than a gradient of the downward slope. ### Claim 4 (depends on 1) The semiconductor device of claim 1, wherein the donor concentration distribution between the first depth and the second depth comprises a flat region in which a donor concentration is substantially constant, wherein a length of the flat region in the depth direction is 10% or more of a thickness of the semiconductor substrate in the depth direction. ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein the donor concentration distribution between the first depth and the second depth comprises a flat region in which a donor concentration is substantially constant, wherein a length of the flat region in the depth direction is 10 μm or more. ### Claim 6 (depends on 4) The semiconductor device of claim 4, wherein a minimum value of the donor concentration in the flat region is larger a donor concentration of the semiconductor substrate. ### Claim 7 (depends on 6) The semiconductor device of claim 6, wherein a minimum value of a donor concentration between the first depth and the second depth is larger than a donor concentration of the semiconductor substrate. ### Claim 8 (depends on 1) The semiconductor device of claim 1, wherein a concentration value of the second hydrogen concentration peak is smaller than a concentration value of the first hydrogen concentration peak. ### Claim 9 (depends on 1) The semiconductor device of claim 1, further comprising: a drift region of N type conductivity provided on the semiconductor substrate; an emitter region of N type conductivity provided in contact with the upper surface in the semiconductor substrate, wherein the emitter region includes a higher donor concentration than the drift region; a base region of P type conductivity provided between the emitter region and the drift region; a collector region of P type conductivity provided in contact with the lower surface in the semiconductor substrate; and a buffer region of N type conductivity provided between the collector region and the drift region, wherein the buffer region has one or more donor concentration peaks whose donor concentration is higher than the drift region, wherein the first donor concentration peak is the donor concentration peak in the buffer region. ### Claim 10 (depends on 9) The semiconductor device of claim 9, further comprising an accumulation region provided between the base region and the drift region, wherein the accumulation region has one or more donor concentration peaks whose donor concentration is higher than the drift region, wherein the second donor concentration peak is the donor concentration peak in the accumulation region. ### Claim 11 (depends on 10) The semiconductor device of claim 10, wherein the accumulation region has the donor concentration peak of a donor other than hydrogen in addition to the second donor concentration peak. ### Claim 12 (depends on 9) The semiconductor device of claim 9, further comprising an accumulation region provided between the base region and the drift region, wherein the accumulation region has one or more donor concentration peaks whose donor concentration is higher than the drift region, wherein the second donor concentration peak is placed between the buffer region and the accumulation region. ### Claim 13 (depends on 1) The semiconductor device of claim 1, further comprising a gate trench section provided on the upper surface of the semiconductor substrate, wherein the second donor concentration peak is placed between a bottom of the gate trench section and the upper surface of the semiconductor substrate. ### Claim 14 (depends on 1) The semiconductor device of claim 1, further comprising: an active section provided in the semiconductor substrate; and an edge termination structure section provided such that it encloses the active section in a top view of the semiconductor substrate; wherein the semiconductor substrate comprises a passage region in which hydrogen implanted to a position of the second hydrogen concentration peak passed through, wherein the passage region provided in the edge termination structure section is shorter in the depth direction than the passage region provided in the active section, or the passage region is not provided in the edge termination structure section. ### Claim 15 (depends on 1) The semiconductor device of claim 1, further comprising a transistor section and a diode section provided on the semiconductor substrate, wherein the semiconductor substrate comprises a passage region in which hydrogen implanted to a position of the second hydrogen concentration peak passed through, wherein the passage region provided in the diode section is shorter in the depth direction than the passage region provided in the transistor section, or the passage region is not provided in the diode section. ### Claim 16 (depends on 1) The semiconductor device of claim 1, further comprising a transistor section and a diode section provided on the semiconductor substrate, wherein the semiconductor substrate comprises a passage region in which hydrogen implanted to a position of the second hydrogen concentration peak passed through, wherein the passage region provided in the transistor section is shorter in the depth direction than the passage region provided in the diode section, or the passage region is not provided in the transistor section. ### Claim 17 (depends on 1) The semiconductor device of claim 1, wherein the first depth is included within a range of 5 μm or less from the lower surface in the depth direction. ### Claim 18 (depends on 17) The semiconductor device of claim 17, wherein a donor concentration at the first hydrogen concentration peak is between 1×1015/cm3 and 1×1017 cm3. ### Claim 19 A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface, wherein a hydrogen concentration distribution in a depth direction connecting the upper surface and the lower surface of the semiconductor substrate has a first hydrogen concentration peak placed within a range of 5 μm or less from the lower surface in the depth direction and a second hydrogen concentration peak placed closer to the upper surface than the first hydrogen concentration peak. ### Claim 20 (depends on 19) The semiconductor device of claim 19, wherein the semiconductor substrate has an impurity concentration peak between the lower surface and the first hydrogen concentration peak, wherein an impurity of the impurity concentration peak is argon or fluorine. ### Claim 21 (depends on 1) A method of manufacturing the semiconductor device of claim 1, comprising: firstly implanting hydrogen to the first depth from the lower surface of the semiconductor substrate; secondly implanting hydrogen to the second depth from the lower surface of the semiconductor substrate to form a passage region in which the hydrogen passes through; and diffusing the hydrogen implanted to the first depth into the passage region by applying heat treatment of the semiconductor substrate, wherein a dose of hydrogen at the firstly implanting is determined such that in the semiconductor substrate which is applied heat treatment at the diffusing, a minimum value of a donor concentration in the passage region is larger than a donor concentration of the semiconductor substrate before the hydrogen is implanted. ### Claim 22 (depends on 21) The method of claim 21, wherein at the firstly implanting, at least a minimum dose of hydrogen which is determined by a diffusion coefficient of hydrogen in the semiconductor substrate and the second depth is implanted. ### Claim 23 (depends on 21) The method of claim 21, wherein the semiconductor substrate is a silicon substrate, wherein assuming the second depth from the lower surface being x (μm), a dose of hydrogen Q (ions/cm2) at the firstly implanting meets Q≥2.6186×1010×e0.12412x. ### Claim 24 (depends on 21) The method of claim 21, wherein at the firstly implanting, hydrogen is implanted to the first depth by plasma doping. ### Claim 25 (depends on 24) The method of claim 24, wherein the lower surface of the semiconductor substrate is ground after the plasma doping. ### Claim 26 (depends on 24) The method of claim 24, wherein the lower surface of the semiconductor substrate is laser annealed after the plasma doping.