Transistor having airgap spacer

An integrated circuit structure comprising:

• a gate structure adjacent to a semiconductor body at a channel region, the channel region being positioned laterally between source/drain regions;
• metal plugs on the source/drain regions;
• trapezoidal-shaped plug caps above and immediately adjacent to the metal plugs;
• a self-aligned metal filled contact (CA) conductively coupled to one of the metal plugs on the source and drain regions;
• a self-aligned metal filled contact over an active area (CBoA) conductively coupled to the gate structure;
• and
• a low k dielectric layer comprising a continuous airgap having an inverted u-shape formed about the gate structure and breaks at about a portion of the gate structure including the self-aligned metal filled contact (CBoA).

An integrated circuit structure comprising:

• a gate structure adjacent to a semiconductor body at a channel region, the channel region being positioned laterally between source/drain regions;
• metal plugs on the source/drain regions;
• rectangular-shaped plug caps above and immediately adjacent to the metal plugs;
• a self-aligned metal filled contact (CA) conductively coupled to one of the metal plugs on the source and drain regions;
• a self-aligned metal filled contact over an active area (CBoA) between adjacent rectangular shaped plug caps conductively coupled to the gate structure in the active region;
• and
• a dielectric spacer comprising a continuous airgap having an inverted u-shape formed about the gate structure when the rectangular-shaped plug caps are adjacent to one another and breaks at an edge of the active area and about a portion of the gate structure including the self-aligned metal filled contact (CBoA).