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US 2021/0066487 A1Published application
High electron mobility transistor
AssigneeUnited Microelectronics Corp.
InventorsYu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Abstract
An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.
Claims16
A high electron mobility transistor (HEMT), comprising:
- an aluminum gallium nitride layer;
- a gallium nitride layer disposed below the aluminum gallium nitride layer;
- a zinc oxide layer disposed under the gallium nitride layer;
- a source electrode and a drain electrode disposed on the aluminum gallium nitride layer;
- and
- a gate electrode disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.
3 more elements
A high electron mobility transistor (HEMT), comprising:
- an aluminum gallium nitride layer;
- a gallium nitride layer disposed below the aluminum gallium nitride layer;
- a magnesium oxide layer disposed under the gallium nitride layer;
- a source electrode and a drain electrode disposed on the aluminum gallium nitride layer;
- and
- a gate electrode disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.
3 more elements
Dependencies are inferred from the claim text.