US 2021/0066485 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

The present disclosure provides a semiconductor device and a method of fabricating the same. The device comprises a substrate; a first semiconductor layer formed on the substrate; a second semiconductor layer formed on the first semiconductor layer; the first semiconductor layer having a smaller forbidden band width than the second semiconductor layer; and a first electrode, a second electrode, and a third electrode formed on the second semiconductor layer; the first semiconductor layer corresponding to the third electrode has a strongly P-type doped first region, and the first semiconductor layer corresponding to the second electrode has a weakly P-type doped second region. The present disclosure contributes to achievement of one of the effects of: reducing a gate leakage current, having a high threshold voltage, high power, and high reliability, allowing a low on-resistance and a normally-off state of the device, and providing a stable threshold voltage, so that the semiconductor device has good switching characteristics.

Claims20

Dependent claims

A semiconductor device, comprising:

a substrate;
a first semiconductor layer on a first surface of the substrate;
a second semiconductor layer on a first surface of the first semiconductor layer;
a two-dimensional charge carrier gas being generating between the first semiconductor layer and the second semiconductor layer;
and
a first electrode, a second electrode, and a third electrode on the second semiconductor layer,
wherein the first semiconductor layer further comprises at least one strongly P-type doped first region and at least one weakly P-type doped second region;
the at least one first region is located under the third electrode, and the at least one second region is located under the second electrode.

5 more elements

A method of manufacturing a semiconductor device, comprising:

a step (100) of providing a substrate;
a step (200) of forming a first semiconductor layer on a first surface of the substrate;
a step (300) of forming at least one weakly P-type doped second region and at least one strongly P-type doped first region in the first semiconductor layer;
a step (400) of forming a second semiconductor layer on a first surface of the first semiconductor layer;
a two-dimensional charge carrier gas being generated between the first semiconductor layer and the second semiconductor layer;
and
a step (500) of forming a first electrode and a second electrode in ohmic contact with the two-dimensional charge carrier gas, and forming a third electrode on a side of a first surface of the second semiconductor layer,
wherein the at least one first region is located under the third electrode, and the at least one second region is located under the second electrode.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims20