Enhancement mode high electron mobility transistor
AssigneeUnited Microelectronics Corp.
InventorsChih-Tung Yeh, Chun-Ming Chang, Bo-Rong Chen, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
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Abstract
An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.
Claims20
An enhancement mode high electron mobility transistor, comprising:
- a group III-V body;
- a group III-V barrier layer, disposed on the group III-V body;
- and
- a gate structure, disposed on the group III-V barrier layer, wherein the gate structure is a stacked structure comprising a gate dielectric layer and a group III-V gate layer being disposed on the gate dielectric layer, and a thickness of the gate dielectric layer is between 15 nm and 25 nm.
Dependencies are inferred from the claim text.