Semiconductor device and semiconductor module

A semiconductor module, comprising:

• a voltage control circuit;
• a semiconductor device electrically connected to the voltage control circuit, the semiconductor device comprising:
• a first electrode spaced from a second electrode in a first direction;
• a first semiconductor layer of a first conductivity type between the first and second electrodes;
• a first pair of first gate electrodes between the first and second electrodes and spaced from each other in a second direction intersecting the first direction, each first gate electrode extending in the first direction into the first semiconductor layer and surrounded by a first gate insulating film;
• a plurality of second gate electrodes between the first pair of first gate electrodes in the second direction and spaced from each other in the second direction, each second gate electrode extending in the first direction between the first and second electrodes and surrounded by a second gate insulating film;
• a second semiconductor layer of a second conductivity type on the first semiconductor layer in a first region between a first gate electrode of the first pair and one of the plurality of second gate electrodes;
• a third semiconductor layer of the first conductivity type on the second semiconductor layer, the third semiconductor layer being directly adjacent to the first gate insulating film;
• and
• a fourth semiconductor layer of the second conductivity type on the second semiconductor layer adjacent to the third semiconductor layer in the second direction, wherein
• a width of the first semiconductor layer in a second region between adjacent pairs of the second gate electrodes in the second direction is less than a length of the first semiconductor layer in the second region, and
• the voltage control circuit is configured to control an on-state voltage applied to the first pair of first gate electrodes and an on-state voltage applied to the plurality of gate electrodes to be applied at different times.