Band gap engineered materials
AssigneeThe Board of Trustees of Western Michigan University
InventorsRobert A. Makin, III, Steven Michael Durbin
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Abstract
A process of fabricating semiconductor devices includes determining a correlation between band gap and long range order parameter for one or more stoichiometries. Semiconductor materials having a preselected (target) band gap can be fabricated by controlling process parameters to form a material having a stoichiometry and long range order parameter having the target band gap.
Claims20
A method of fabricating a semiconductor device, the method comprising:
- determining a target band gap;
- utilizing a predefined correlation between a band gap and a plurality of semiconductor material stoichiometries and cation or anion ordering to determine at least one semiconductor material stoichiometry providing the target band gap;
- and
- controlling process parameters to form a semiconductor device comprising at least one semiconductor material having the target band gap.
A method of fabricating a superconducting device, the method comprising:
- determining a target transition temperature;
- utilizing a predefined correlation between transition temperature and a superconductor material composition and an order parameter to determine a superconductor material composition providing the target transition temperature;
- and
- controlling process parameters to form a superconductor device comprising at least one superconductor material having a material composition providing the target transition temperature.
A method of fabricating a semiconductor material, the method comprising:
- a) choosing a semiconductor material composition that can be varied between two points;
- b) fabricating a plurality of material samples having the chosen semiconductor material composition using different combinations of growth parameters to produce a plurality of material samples having a range of values of an order parameter and a band gap;
- c) measuring the order parameter and band gap of at least two of the material samples fabricated at step b);
- d) determining a correlation between order parameter and band gap;
- e) repeating steps b)-d) for a range of specific semiconductor material compositions at/or between the two points;
- f) selecting a desired band gap for the semiconductor material composition;
- g) utilizing the correlation between order parameter and band gap to determine a target semiconductor material composition and order parameter having the desired band gap;
- fabricating a semiconductor material, including setting and/or adjusting growth parameters to maintain at least one of the target semiconductor material composition and order parameter.
Dependencies are inferred from the claim text.