Methods of fabricating semiconductor devices having gate-all-around structure with inner spacer last process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hsiung LIN, Pei-Hsun WANG, Chih-Hao WANG, Kuo-Cheng CHING, Jui-Chien HUANG
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Abstract
A semiconductor device is provided. The semiconductor device includes a plurality of channel layers stacked over a semiconductor substrate and spaced apart from one another, a source/drain structure adjoining the plurality of channel layers, a gate structure wrapping around the plurality of channel layers, and a first inner spacer between the gate structure and the source/drain structure and between the plurality of channel layers. The first inner spacer is made of an oxide of a semiconductor material.
Claims20
A semiconductor device, comprising:
- a plurality of channel layers stacked over a semiconductor substrate and spaced apart from one another;
- a source/drain structure adjoining the plurality of channel layers;
- a gate structure wrapping around the plurality of channel layers;
- and
- a first inner spacer between the gate structure and the source/drain structure and between the plurality of channel layers, wherein the first inner spacer is made of an oxide of a semiconductor material.
A semiconductor device, comprising:
- a plurality of channel layers and a source/drain structure over a fin;
- a gate structure wrapping around the plurality of channel layers;
- a plurality of inner spacers between the gate structure and the source/drain structure;
- and
- a dopant portion between a first channel of the plurality of channel layers and the source/drain structure and between the plurality of inner spacers, wherein a doped concentration of a dopant in the doped portion is greater than a doped concentration of the dopant in the channel layers.
A semiconductor device, comprising:
- a fin protruding from a semiconductor substrate;
- an isolation structure surrounding the fin;
- a plurality of channel layers separated from each other and disposed over the fin, wherein the channel layers are made of a first semiconductor material;
- a gate structure filling spaces between the channel layers and surrounding the channel layers;
- epitaxial source and drain structures disposed on opposite sides of the gate structure;
- and
- inner spacers disposed between the gate structure and the epitaxial source and drain structures, wherein the inner spacers are made of an oxide of a second semiconductor material.
Dependencies are inferred from the claim text.