Back to results
US 2021/0066446 A1Published application
Capacitor and method for fabricating the same
AssigneeSK hynix Inc.
InventorsMyung-Soo LEE, Cheol-Hwan PARK, Chee-Hong AN
Life of this patent
Estimating the term…
Abstract
Disclosed is a capacitor having a high dielectric constant and low leakage current and a method for fabricating the same wherein the capacitor may include a first conductive layer a second conductive layer, a dielectric layer stack between the first conductive layer and the second conductive layer, a dielectric interface layer between the dielectric layer stack and the second conductive layer, and a high work function interface layer between the dielectric interface layer and the second conductive layer.
Claims20
A capacitor comprising:
- a first conductive layer;
- a second conductive layer;
- a dielectric layer stack between the first conductive layer and the second conductive layer;
- a dielectric interface layer between the dielectric layer stack and the second conductive layer;
- and
- a high work function interface layer between the dielectric interface layer and the second conductive layer.
3 more elements
A capacitor comprising:
- a first conductive layer;
- a second conductive layer;
- and
- a multi-layered stack between the first conductive layer and the second conductive layer;
- wherein the multi-layered stack comprises:
- a first tetragonal zirconium oxide layer over the first conductive layer;
- a second tetragonal zirconium oxide layer over the aluminum-doped zirconium oxide layer;
- an aluminum-doped tetragonal zirconium oxide layer between the first tetragonal zirconium oxide layer and the second tetragonal zirconium oxide layer;
- an aluminum oxide layer over the second tetragonal zirconium oxide layer;
- a titanium oxide layer over the aluminum oxide layer;
- and
- a carbon doped zirconium nitride layer over the titanium oxide layer.
9 more elements
A memory cell comprising:
- a buried word line embedded in a substrate;
- a bit line positioned at a higher level than the buried word line;
- and
- a capacitor positioned at a higher level than the bit line,
- wherein the capacitor comprises:
- a bottom electrode;
- a top electrode;
- a dielectric layer stack between the bottom electrode and the top electrode;
- a dielectric interface layer between the dielectric layer stack and the top electrode;
- and
- a high work function interface layer between the dielectric interface layer and the top electrode,
- wherein the dielectric layer stack comprises a zirconium oxide-based material, and the high work function interface layer comprises a zirconium nitride-based material.
9 more elements
Dependencies are inferred from the claim text.