Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsKazuhiko IWAKIRI, Akira MATSUMOTO
Life of this patent
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Abstract
A semiconductor device including a multilayer wiring layer comprising a first wiring, a first insulating film formed on the multilayer wiring layer and having a first opening exposing a portion of the first wiring, a second insulating film formed on the first insulating film and having a second opening continuing with the first opening, and an inductor formed of the first wiring, and a second wiring electrically connected with the first wiring through a via formed in the first opening. A side surface of the via contacts with the first insulating film, and does not contact with the second insulating film.
Claims19
A semiconductor device comprising:
- a multilayer wiring layer comprising a first wiring;
- a first insulating film formed on the multilayer wiring layer and having a first opening exposing a portion of the first wiring;
- a second insulating film formed on the first insulating film and having a second opening continuing with the first opening;
- and
- an inductor formed of:
- the first wiring;
- a second wiring electrically connected with the first wiring through a via formed in the first opening,
- wherein a side surface of the via contacts with the first insulating film, and does not contact with the second insulating film.
A method of manufacturing a semiconductor device, comprising:
- forming a multilayer wiring layer comprising a first wiring;
- forming a first insulating film on the multilayer wiring layer so as to cover the first wiring;
- forming a first opening in the first insulating film, the first opening exposing a portion of the first wiring;
- forming a second insulating film on the first insulating film so as to bury the first opening;
- forming a second opening continuing with the first opening in the second insulating film;
- and
- forming a second wiring electrically connected with the first wiring through a via formed in the first opening to form an inductor,
- wherein a side surface of the via contacts with the first insulating film, and does not contact with the second insulating film.
Dependencies are inferred from the claim text.