Novel image sensor device
AssigneeTaiwan Serniconductor Manufacturing Co., Ltd.
InventorsChen-Hsiang HUNG, Chung-Chuan Tseng, Li-Hsin Chu, Chia-Ping Lai
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Abstract
A semiconductor device includes: a photodiode formed in a substrate; and at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate, wherein the photodiode and the at least one transistor at least partially form a pixel.
Claims20
A semiconductor device, comprising:
- a photodiode formed in a substrate;
- at least one transistor having a gate feature that at least partially extends from a major surface of the substrate into the substrate;
- a pixel comprising the photodiode and the at least one transistor;
- and
- an isolation feature, extending into the substrate, that surrounds the photodiode and the at least one transistor, wherein at least a portion of the isolation feature directly contact the second portion of the gate feature of the at least one transistor.
A semiconductor device, comprising:
- a photodiode formed in a substrate;
- at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion extending from the major surface of the substrate into the substrate;
- a pixel comprising the photodiode and the at least one transistor;
- and
- an isolation feature, extending into the substrate, that surrounds the photodiode and the at least one transistor, wherein at least a portion of the isolation feature directly contact the second portion of the gate feature of the at least one transistor.
A semiconductor device, comprising:
- a photodiode formed in a substrate;
- at least one transistor having a gate feature that comprises a first portion and a second portion coupled to an end of the first portion, the first portion disposed above and extending along a major surface of the substrate and the second portion partially extending from the major surface of the substrate into the substrate;
- and
- an isolation feature, extending into the substrate, that surrounds the photodiode and the at least one transistor, wherein at least a portion of the isolation feature directly contact the second portion of the gate feature of the at least one transistor.
Dependencies are inferred from the claim text.