Antiferroelectric memory devices and methods of making the same

A method of forming a three-dimensional array of antiferroelectric memory array, comprising:

• forming a vertically alternating sequence of electrically conductive layers and insulating layers over a dielectric material layer;
• dividing the vertically alternating sequence into multiple alternating stacks of first electrically conductive lines and insulating layers by forming line trenches through the vertically alternating sequence;
• forming a line trench fill structure including a combination of a symmetry-breaking material rail, an antiferroelectric rail, and an electrically conductive rail within each of the line trenches, wherein the symmetry-breaking material layer comprises a doped semiconductor layer or a ferroelectric layer;
• and
• dividing each line trench fill structure into a row of composite pillar structures, wherein each of the composite pillar structures comprises a U-shaped symmetry-breaking material layer, a U-shaped antiferroelectric layer, and a second electrically conductive line that extends vertically.