Back to results
US 2021/0066331 A1Published application
Semiconductor memory device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsHan Na GOH, Jae Taek KIM
Life of this patent
Estimating the term…
Abstract
The semiconductor memory device includes a stack structure including first material films stacked, but spaced apart from each other, in a slimming region, the first material films being stacked in a step structure in the slimming region, a contact hole exposing a portion of the first material films formed in different layers in the slimming region, and a plurality of material films that are applied and etched to electrically connect one of the material layers to a peripheral circuit.
Claims20
A semiconductor memory device comprising:
- a stack structure including first material films stacked, but spaced apart from each other, in a slimming region, the first material films being stacked in a step structure in the slimming region;
- a contact hole exposing a portion of the first material films formed in different layers in the slimming region;
- and
- a plurality of material films that are applied and etched to electrically connect one of the material layers to a peripheral circuit.
1 more element
A method of manufacturing a semiconductor memory device, the method comprising:
- forming a stack structure including first material films stacked, but spaced apart from each other, in a cell region and a slimming region, the first material films being stacked in a step structure in the slimming region;
- forming a support hole passing through the stack structure in the cell region and a contact hole passing through the stack structure in the slimming region;
- sequentially forming a second material film and a third material film along an inner surface of the support hole and the contact hole;
- etching a lower portion of the third and second material films to expose a portion of the first material films through a lower surface of the contact hole;
- forming a fourth material film along the inner surface of the support hole and the contact hole after etching the lower portion of the third and second material films;
- and
- filling the support hole and the contact hole in which the fourth material film is formed with a fifth material film.
4 more elements
Dependencies are inferred from the claim text.