Group iii-nitride (iii-n) devices with reduced contact resistance and their methods of fabrication

A device comprising:

• a terminal structure comprising a first group III-Nitride (III-N) material, the terminal structure having a central body and a first plurality of fins, and a second plurality of fins, opposite the first plurality of fins;
• a polarization charge inducing layer above the terminal structure, the polarization charge inducing layer comprising a second III-N material;
• a gate electrode above the polarization charge inducing layer;
• a source structure on the polarization charge inducing layer above a second portion of the central body and on sidewalls of the first plurality of fins, wherein the source structure comprises a third III-N material;
• a drain structure on the polarization charge inducing layer, above a third portion of the central body and on sidewalls of the second plurality of fins, wherein the drain structure comprises the third III-N material;
• a source contact on the source structure;
• and
• a drain contact on the first and second portions of the drain structure.

A method of fabricating a semiconductor structure, the method comprising:

• forming a layer comprising a first group III-nitride (III-N) material on a substrate;
• forming a polarization charge inducing layer comprising a second III-N material above the first layer;
• patterning the layer comprising the first III-N material and the polarization charge inducing layer and forming a central body, a first plurality of fins adjacent to a first side of the central body, and a second plurality of fins adjacent to a second side of the central body, opposite the first side;
• forming an isolation material between the first plurality of fins and between the second plurality of fins;
• forming a source structure and a drain structure;
• forming a gate dielectric layer on the polarization charge inducing layer;
• forming a gate electrode on the gate dielectric layer;
• and
• forming a source contact on the source structure and a drain contact on the drain structure.

A system comprising:

• a processor;
• and
• a radio transceiver coupled to the processor, wherein the radio transceiver includes a transistor structure comprising:
• a first structure comprising a first III-N material, the first structure comprising a central body and a first plurality of fins adjacent to a first side of the central body, a second plurality of fins adjacent to a second side of the central body, opposite the first side;
• a polarization charge inducing layer above a first portion of the central body, the polarization charge inducing layer comprising a second III-N material;
• a gate electrode above the polarization charge inducing layer;
• and
• a source structure and a drain structure comprising a third III-N material with an impurity dopant on opposite sides of the gate electrode, the source structure above a second portion of the central body and above the first plurality of fins, the drain structure above a third portion of the central body and above the second plurality of fins;
• and
• a source contact on the first and second portions of the source structure;
• and
• a drain contact on the first and second portions of the drain structure.