Methods For Processing a Workpiece Using Fluorine Radicals
AssigneesMattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.
InventorsQi Zhang, Xinliang Lu
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Abstract
Methods for processing a workpiece with fluorine radicals are provided. In one example implementation, the method includes a workpiece having at least one silicon layer and at least one silicon germanium layer. The method can include placing the workpiece on a workpiece support in a processing chamber. The method can include generating one or more species from a process gas in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can include exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer.
Claims20
A method for processing a workpiece, the workpiece comprising at least one silicon layer and at least one silicon germanium layer, the method comprising conducting an etch process on the workpiece, the etch process comprising:
- placing the workpiece on a workpiece support in a processing chamber;
- generating one or more species from a first process gas using a plasma induced in a plasma chamber;
- filtering the one or more species to create a filtered mixture, the filtered mixture comprising one or more fluorine radicals, carbon radicals, and hydrogen radicals;
- and
- exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer, wherein the at least one silicon layer is removed at an etch rate that is faster than an etch rate of the at least one silicon germanium layer.
A method of processing a semiconductor workpiece, the workpiece comprising a semiconductor material, the semiconductor material comprising silicon and silicon germanium, the method comprising performing a radical based surface treatment process on the semiconductor material, the radical based surface treatment process comprising:
- placing the workpiece in a processing chamber;
- generating one or more fluorine radicals in a mixture in a plasma chamber by inducing a plasma in a process gas with an inductively coupled plasma source;
- generating one or more organic radicals in the mixture in the plasma chamber with the inductively coupled plasma source;
- and
- exposing the semiconductor material to the fluorine radicals and the organic radicals to remove silicon at an etch rate that is faster than an etch rate of the silicon germanium.
Dependencies are inferred from the claim text.