Method of fabricating hexagonal boron nitride
AssigneesSamsung Electronics Co., Ltd., Unist (Ulsan National Institute of Science and Technology)
InventorsChangseok LEE, Hyeonsuk SHIN, Hyeonjin SHIN, Seokmo HONG, Kyungyeol MA
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Abstract
Disclosed herein is a method of fabricating hexagonal boron nitride in which hexagonal boron nitride is epitaxially grown. A method of fabricating hexagonal boron nitride includes placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of 15% or less with hexagonal boron nitride (h-BN) in a chamber; and growing hexagonal boron nitride on the catalytic metal at a temperature of 800° C. or lower while supplying a nitrogen source and a boron source into the chamber.
Claims25
A method of fabricating hexagonal boron nitride, the method comprising:
- placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and having a lattice mismatch of greater than or equal to 0% and less than or equal to 15% with hexagonal boron nitride (h-BN);
- and
- growing hexagonal boron nitride on the catalytic metal at a temperature of 800° C. or lower while supplying a nitrogen source and a boron source into the chamber.
A method of fabricating hexagonal boron nitride, the method comprising:
- placing a catalytic metal in a chamber, the catalytic metal having a hexagonal crystal structure and including crystals of at least one of cobalt (Co), an Co—Cr alloy, a Co—N alloy, a Co—Ir alloy, zinc (Zn), ruthenium (Ru), technetium (Tc), osmium (Os), and rhenium (Re);
- and
- growing hexagonal boron nitride on the catalytic metal at a temperature in a range of about 350° C. to about 800° C. while supplying a nitrogen source and a boron source into the chamber.
Dependencies are inferred from the claim text.