Variable resistance non-volatile memory device

A variable resistance non-volatile memory device, comprising;

• a memory cell array including memory cells;
• a write circuit that writes to the memory cells;
• and
• a control circuit, wherein
• each of the memory cells includes:
• a memory element that is non-volatile and variable-resistance, and reversibly changes between a low resistance state and a high resistance state;
• and
• a cell transistor connected in series to the memory element, the write circuit includes:
• a source line driver circuit that is connected to the cell transistor via a source line and allows current to flow between one of the memory cells and a first voltage source or a reference potential;
• and
• a bit line driver circuit that is connected to the memory element via a bit line and allows current to flow between one of the memory cells and a second voltage source or the reference potential,
• when carrying out a write operation of changing the memory element to the low resistance state, the control circuit performs, on the source line driver circuit, (i) a first control for allowing a first write current to flow through the memory element, to start the changing of the memory element to the low resistance state, the first write current having a first current value and flowing in a direction from the source line to the bit line, and after the first control, (ii) a second control for allowing a second write current to flow through the memory element, the second write current having a second current value and flowing in a same direction as the direction of the first write current allowed to flow in the first control, and
• the second current value is greater than a largest value of overshoot current flowing through the memory element after the start of the changing of the memory element to the low resistance state.