Memory storage device and operation method thereof
AssigneeWinbond Electronics Corp.
InventorsWu-Chuan Cheng, Chien-Ti Hou
Life of this patent
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Abstract
A memory operation method applicable to a memory storage device is provided. The memory operation method including the following steps: receiving, from a memory controller, a first operation command for performing a first memory operation on a memory array of the memory storage device; and in response to the first operation command, transmitting first address information of the memory array corresponding to the first memory operation to the memory controller through a data interface of the memory storage device. In addition, a memory storage device using the memory operation method is also provided.
Claims20
A memory operation method applicable to a memory storage device, the memory operation method comprising:
- receiving, from a memory controller, a first operation command for performing a first memory operation on a memory array of the memory storage device;
- and
- in response to the first operation command, transmitting first address information of the memory array corresponding to the first memory operation to the memory controller through a data interface of the memory storage device.
A memory storage device, comprising:
- a memory array;
- a command interface coupled to the memory array and a memory controller for receiving, from the memory controller, a first operation command for performing a first memory operation on the memory array;
- and
- a data interface coupled to the command interface and the memory controller for transmitting, in response to the first operation command received by the command interface, first address information of the memory array corresponding to the first memory operation to the memory controller.
Dependencies are inferred from the claim text.