Memory device

A memory device comprising:

• a memory cell region including word lines stacked on a first substrate, bit lines disposed on the word lines, a channel structure passing through the word lines and connected to the bit lines, and a common source line;
• a peripheral circuit region disposed on a second substrate and including a peripheral circuit operating a memory cell array included in the memory cell region;
• a bonding metal electrically connecting an uppermost metal layer of the memory cell region and an uppermost metal layer of the peripheral circuit region to each other in a bonding area;
• and
• a routing wire electrically connected to the peripheral circuit in non-bonding areas in which the memory cell region and the peripheral circuit region are not electrically connected to each other,
• wherein the bonding area of the memory cell region includes cell contact plugs electrically connected to the word lines and the peripheral circuit, and
• the cell contact plugs are located between the non-bonding areas.

A memory device comprising:

• a first semiconductor chip including a first bonding area and a first non-bonding area disposed around the first bonding area;
• and
• a second semiconductor chip including a second bonding area disposed in a position corresponding to a position of the first bonding area, and a second non-bonding area disposed in a position corresponding to a position of the first non-bonding area and disposed around the second bonding area,
• wherein a metal contact disposed on an uppermost metal layer of the first bonding area and a metal contact disposed on an uppermost metal layer of the second bonding area are electrically connected to each other,
• a metal contact disposed in an uppermost metal layer of the first non-bonding area and a metal contact disposed on an uppermost metal layer of the second non-bonding area are not electrically connected to each other,
• the metal contact disposed in the uppermost metal layer of the second non-bonding area forms a routing wire,
• the first bonding area surrounds at least a portion of the first non-bonding area, and
• the second bonding area surrounds at least a portion of the second non-bonding area.