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US 2021/0063871 A1Published application
Resist material and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTomohiro Kobayashi, Tsukasa Watanabe, Hiroki Nonaka, Seiichiro Tachibana
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Abstract
The present invention is a resist material containing: (i) a metal compound shown by the following general formula (M-1) and (ii) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.
Claims20
A resist material comprising:
- (i) a metal compound shown by the following general formula (M-1) and (ii) an organic solvent,
- wherein M1 represents an element selected from titanium, zirconium, hafnium, and tin;
- R1 and R2 each independently represents a linear or branched alkyl group or alkoxy group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms, and one or more hydrogen atoms are optionally substituted with a halogen atom;
- R3 represents a halogen atom or a linear or branched alkyl group or alkoxy group having 1 to 6 carbon atoms;
- and “f” represents 1 to 4 and “g” represents 0 to 3, where f+g=4.
2 more elements
Dependencies are inferred from the claim text.