Optoelectronic component

An optoelectronic component, comprising:

• an optoelectronic semiconductor chip with an emission side;
• a conversion element on the emission side, wherein
• the conversion element is configured for converting a primary radiation emitted by the semiconductor chip in operation as intended,
• the conversion element is divided into at least a first layer and a second layer,
• the first layer is arranged between the second layer and the emission side,
• the first layer comprises a first matrix material with phosphor particles incorporated therein,
• the second layer comprises a second matrix material with phosphor particles incorporated therein,
• the first matrix material of the first layer has a higher refractive index than the second matrix material of the second layer,
• the maximum thickness of the first and second layer is 100 μm or 50 μm, and
• the proportion by mass of phosphor particles in the first and second layer is at least 30%.