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US 2021/0063501 A1Published application
Reducing voltage non-linearity in a bridge having tunneling magnetoresistance (tmr) elements
AssigneeAllegro MicroSystems, LLC
InventorsRémy Lassalle-Balier, Pierre Belliot, Christophe Hoareau, Jean-Michel Daga
Life of this patent
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Abstract
In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.
Claims38
A magnetic field sensor, comprising:
- a plurality of tunneling magnetoresistance (TMR) elements comprising a first TMR element, a second TMR element, a third TMR element and a fourth TMR element,
- wherein the first and second TMR elements are connected to a voltage source, wherein the third and fourth TMR elements are connected to ground,
- wherein each TMR element has a pillar count of more than one pillar,
- wherein the pillar count is selected to reduce the angle error below 1.0°.
1 more element
A magnetic field sensor, comprising:
- a plurality of tunneling magnetoresistance (TMR) elements comprising a first TMR element, a second TMR element, a third TMR element and a fourth TMR element arranged in a bridge, wherein a voltage across each TMR element is constant, wherein the first and second TMR elements are connected to a voltage source;
- a plurality of transistors comprising a first transistor, a second transistor, a third transistor and a fourth transistor, wherein each transistor is connected to another transistor and to a TMR element;
- a first amplifier, wherein an output of the first amplifier is connected to a base of the first transistor and the output of the first amplifier is connected to a base of the second transistor, wherein a first input of the first amplifier is connected to the first TMR element and the second input of the first amplifier is connected to the second TMR element;
- and
- a second amplifier, wherein an output of the second amplifier is connected to a base of a third transistor and the output of the second amplifier is connected to a base of a fourth transistor, wherein a first input of the second amplifier is connected to the third TMR element and the second input of the second amplifier is connected to the fourth TMR element.
2 more elements
A magnetic field sensor, comprising:
- a plurality of tunneling magnetoresistance (TMR) elements comprising a first TMR element, a second TMR element, a third TMR element and a fourth TMR element arranged in a bridge, wherein a voltage across each TMR element is constant, wherein the first and second TMR elements are connected to a constant voltage source, wherein the third and fourth TMR elements are connected to ground, wherein the first and third TMR elements are connected to a first bridge node and the second and third TMR elements are connected to a second bridge node;
- a first resistor connected to the first bridge node and a first output node;
- a second resistor connected to the second bridge node and a second output node;
- a first amplifier, wherein an output of the first amplifier is connected to the first output node and the first resistor, wherein a first input of the first amplifier is connected to the first bridge node and the first resistor;
- and
- a second amplifier, wherein an output of the second amplifier is connected to the second output node and the second resistor, wherein a first input of the second amplifier is connected to the second bridge node and the second resistor, wherein a second input of the second amplifier is connected to a second input of the first amplifier.
3 more elements
Dependencies are inferred from the claim text.