Method for Measurement of Current-Voltage Characteristics

A method for measurement of current-voltage characteristics representing a relationship between a drain current (or collector current) and a drain-source voltage (or collector-emitter voltage) of a first transistor as a measurement target, the method comprising:

• a first step of setting the drain current (or collector current) and the drain-source voltage (or collector-emitter voltage) using
• a voltage source and a current source connected in series with the first transistor and
• a rectifying element connected in parallel with, with a reverse polarity to, an inductive load serving as the current source;
• a second step of measuring a gate-source voltage (or gate-emitter voltage) and a gate current in a switching transient state of the first transistor;
• and
• a third step of calculating a voltage applied to a gate oxide film of the first transistor using results of the measurement of the gate-source voltage (or gate-emitter voltage) and the gate current and acquiring the current-voltage characteristics of the first transistor using a result of the calculation,
• wherein
• in the first step, during an excitation period in which an excitation current is passed through the inductive load, part of the excitation current is bypassed through a path that does not pass through the first transistor.