Inversion layer gas sensors using bulk silicon chemical sensitive transistors
AssigneeThe Regents of the University of California
InventorsAli Javey, Hossain Mohammad Fahad, Niharika Gupta
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Abstract
A gas sensor and methods for producing the same are disclosed. The gas sensor of the present disclosure includes a bulk silicon layer, comprising a controllable inversion layer, an oxide layer on top of the bulk silicon layer, wherein the controllable inversion layer is located at an interface of the bulk silicon layer and the oxide layer, and a sensing layer on the oxide layer, wherein a sensitivity of the sensing layer is a function the controllable inversion layer.
Claims15
A gas sensor, comprising:
- a bulk silicon layer, comprising a controllable inversion layer;
- an oxide layer on top of the bulk silicon layer, wherein the controllable inversion layer is located at an interface of the bulk silicon layer and the oxide layer;
- and
- a sensing layer on the oxide layer, wherein a sensitivity of the sensing layer is a function the controllable inversion layer.
A gas sensor, comprising:
- an n-doped bulk silicon layer having a p− doped body, wherein the n-doped bulk silicon layer comprises a controllable inversion layer;
- an oxide layer on top of the controllable inversion layer of the n-doped bulk silicon layer;
- and
- a sensing layer on the oxide layer, wherein a sensitivity of the sensing layer is a function of a thickness of the controllable inversion layer.
A method for fabricating a gas sensor, comprising:
- doping wells of a silicon substrate;
- growing an oxide layer between the wells of the silicon substrate and over a controllable inversion layer of the silicon substrate;
- and
- depositing a sensing layer on the oxide layer, wherein a sensitivity of the sensing layer is a function of a thickness of the controllable inversion layer, wherein the thickness of the controllable inversion layer is based on amount of voltage that is applied to the silicon substrate.
Dependencies are inferred from the claim text.