Group vi metal deposition process

Abstract

Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)6) or tungsten hexacarbonyl (W(CO)6) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)6) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of H2O is utilized. This pulsing with H2O vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)6-based CVD processes.

Dependencies are inferred from the claim text.