Direct-gap group iv alloy nanocrystals with composition-tunable energy gaps and near-infrared photoluminescence
AssigneeVirginia Commonwealth University
InventorsIndika U. ARACHCHIGE, Umit OZGUR, Denis O. DEMCHENKO, Venkatesham TALLAPALLY, Tanner A. NAKAGAWARA
Life of this patent
Estimating the term…
Abstract
Colloidal synthesis of narrowly disperse, near IR emitting Group IV alloy quantum dots with wide range of Sn compositions via reduction of precursor halides is provided, allowing for less-toxic, earth abundant, and silicon-compatible Group IV alloy quantum dots for application in a broad range of electronic and photonic technologies.
Claims24
Quantum dots comprising a Ge1−xSnx or Si1−xSnx alloy and direct-energy-gaps, wherein said quantum dots are 2-6 nm in size and have a size dispersity of 11-15%.
A method of forming quantum dots comprising an alloy of germanium (Ge) or silicon (Si) and tin (Sn), comprising the steps of:
- reacting a halide precursor of Ge or Si with a halide precursor of Sn in the presence of hexadecylamine surfactant and a solvent to produce a solution comprising a complex between Ge or Si and Sn,
- adding a pre-determined amount of alkyllithium reducing agent to the solution, and
- heating the solution to a temperature suitable to form said quantum dots.
Dependencies are inferred from the claim text.