Method for manufacturing silicon carbide substrate, method for manufacturing silicon carbide epitaxial substrate, and method for manufacturing silicon carbide semiconductor device

A method for manufacturing a silicon carbide substrate, the method comprising:

• preparing a silicon carbide ingot;
• and
• cutting the silicon carbide ingot using a wire,
• the silicon carbide ingot including a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface,
• a direction from the bottom surface toward the top surface being a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8° relative to the [0001] direction, in the cutting of the silicon carbide ingot, the silicon carbide ingot being cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within ±5° relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface,
• in the cutting of the silicon carbide ingot, a linear velocity of the wire being more than or equal to 1000 m/minute, a tension of the wire being less than or equal to 70% of a breaking tension of the wire,
• a diameter of the wire being less than or equal to 200 μm,
• a diamond abrasive grain being fixed to the wire,
• a grain size of the diamond abrasive grain being less than or equal to 50 μm.