Semiconductor device with nanostructures and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Hsiang TSENG, Chih-Fei LEE, Chia-Pin CHENG, Fu-Cheng CHANG
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Abstract
A semiconductor device includes a semiconductor substrate, a photo sensing region, and a plurality of nanostructures. The semiconductor substrate has a first dopant. The photo sensing region is embedded in the semiconductor substrate, has a top surface level with a top surface of the semiconductor substrate, and has a second dopant that is of a different conductivity type than the first dopant. The plurality of nanostructures is on the photo sensing region and is made of a material the same as the photo sensing region.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having a first dopant;
- a photo sensing region embedded in the semiconductor substrate, having a top surface level with a top surface of the semiconductor substrate, and having a second dopant that is of a different conductivity type than the first dopant;
- and
- a plurality of nanostructures on the photo sensing region and made of a material the same as the photo sensing region.
A semiconductor device, comprising:
- a photo sensing region having a first dopant;
- and
- a semiconductor substrate laterally surrounding the photo sensing region and having a second dopant that is of a different conductivity type than the first dopant;
- and
- a plurality of nanostructures embedded in the photo sensing region and having top surfaces level with a top surface of the photo sensing region.
A method of forming a semiconductor device, comprising:
- forming a photo sensing region in a semiconductor substrate;
- forming a nanostructure layer extending across opposite sidewalls of the photo sensing region;
- etching the nanostructure layer until the photo sensing region is exposed to form a plurality of nanostructures on the photo sensing region;
- forming a dielectric layer over the plurality of nanostructures;
- and
- forming a light filter layer over the dielectric layer.
Dependencies are inferred from the claim text.