Optoelectronic semiconductor chip and method for producting an optoelectronic semiconductor chip

An optoelectronic semiconductor chip with

• a semiconductor layer sequence based on AlInGaP and/or on AlInGaAs with an active zone for generating a radiation
• a metal mirror for the radiation at a rear side of the semiconductor layer sequence opposite a light extraction side,
• a protective metallization directly on a side of the metal mirror facing away from the semiconductor layer sequence,
• one or more metallic electrical through-connections which extend directly up to a side of the semiconductor layer sequence facing the metal mirror or directly up to a contact layer of a transparent conductive oxide and terminate at a distance from the active zone,
• an adhesion promoting layer directly on a side of the metal mirror facing the semiconductor layer sequence,
• an electrically insulating reflector of at least one material which is transparent for the radiation generated during the operation,
• wherein
• the reflector is located directly between the semiconductor layer sequence and the adhesion promoting layer,
• the adhesion promoting layer and the protective metallization project laterally beyond the semiconductor layer sequence,
• the reflector is penetrated by the through-connection and
• the adhesion promoting layer is an encapsulation layer for the metal mirror so that the metal mirror is encapsulated at least at an outer edge by the adhesion promoting layer together with the protective metallization.