Storage memory device

A storage memory device, comprising a vertical field effect transistor including:

• a semiconductor substrate;
• a pillar disposed on said semiconductor substrate and extending away from said semiconductor substrate in an extension direction, said pillar including a source and a drain that are disposed at two opposite end portions of said pillar, and a channel that is disposed between and connected with said source and said drain;
• a first insulating layer surrounding a portion of said channel of said pillar;
• a stacked structure disposed on and surrounding said first insulating layer opposite to said pillar, and including a charge trapping layer and a composite element that has a ferroelectric layer and antiferroelectric layer, said ferroelectric layer being made of a doped hafnium oxide-based material that has a predominantly orthorhombic phase and that exhibits a negative capacitance, said antiferroelectric layer being made of a zirconium oxide-based material that has a predominantly tetragonal phase;
• and
• a gate unit surrounding a portion of said stacked structure opposite to said first insulating layer, and including at least one gate.