Semiconductor device
AssigneeGlobalWafers Co., Ltd.
InventorsMing-Shien Hu, Chien-Jen Sun, I-Ching Li, Wen-Ching Hsu
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Abstract
A semiconductor device includes a substrate, an initial layer, and a superlattice stack. The initial layer is located on the substrate and includes aluminum nitride (AlN). The superlattice stack is located on the initial layer and includes a plurality of first films, a plurality of second films and at least one doped layer, and the first films and the second films are alternately stacked on the initial layer, wherein the at least one doped layer is arranged in one of the first films and the second films, and dopants of the at least one doped layer are selected from a group consisting of carbon, iron, and the combination thereof.
Claims13
A semiconductor device comprising:
- a substrate;
- an initial layer located on the substrate, the initial layer comprising aluminum nitride;
- and
- a superlattice stack located on the initial layer, the superlattice stack comprising a plurality of first films, a plurality of second films, and at least one doped layer, the first films and the second films being alternately stacked on the initial layer, wherein the at least one doped layer is arranged in one of the first films and the second films, and dopants of the at least one doped layer are selected from a group consisting of carbon, iron, and the combination thereof.
Dependencies are inferred from the claim text.