Image sensing device

An image sensing device comprising:

• first to fourth photoelectric conversion elements configured to generate photocharges in response to incident light;
• a floating diffusion region shared by the first to fourth photoelectric conversion elements, and configured to temporarily store the photocharges generated by the first to fourth photoelectric conversion elements;
• and
• first to fourth transfer gates disposed to overlap with the first to the fourth photoelectric conversion elements, respectively,
• wherein each of the first to fourth transfer gates includes:
• a main transfer gate disposed to overlap a center part of a corresponding photoelectric conversion element, and configured to transmit the photocharges generated by the corresponding photoelectric conversion element to the floating diffusion region in response to a first signal;
• and
• a sub transfer gate disposed to overlap a boundary region of a corresponding photoelectric conversion element, and configured to transmit the photocharges generated by the corresponding photoelectric conversion element to the floating diffusion region in response to a second signal different in magnitude from the first signal.