Memory management method, memory storage device and memory control circuit unit
AssigneeHefei Core Storage Electronic Limited
InventorsQi-Ao Zhu, Jing Zhang, Xin Wang, Kai-Di Zhu
Life of this patent
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Abstract
A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a first write command from a host system; instructing a rewritable non-volatile memory module to perform a first write operation according to the first write command; obtaining first performance information corresponding to the first write operation; and updating threshold information according to the first performance information, wherein the threshold information is configured to determine a type of target data.
Claims27
A memory management method, used for a rewritable non-volatile memory module, the memory management method comprising:
- receiving a first write command from a host system;
- instructing the rewritable non-volatile memory module to perform a first write operation according to the first write command;
- obtaining first performance information corresponding to the first write operation;
- and
- updating threshold information according to the first performance information, wherein the threshold information is configured to determine a type of target data.
A memory storage device, comprising:
- a connection interface unit, configured to be coupled to a host system;
- a rewritable non-volatile memory module;
- and
- a memory control circuit unit, coupled to the connection interface unit and the rewritable non-volatile memory module,
- wherein the memory control circuit unit is configured to receive a first write command from the host system,
- the memory control circuit unit is further configured to instruct the rewritable non-volatile memory module to perform a first write operation according to the first write command,
- the memory control circuit unit is further configured to obtain first performance information corresponding to the first write operation, and
- the memory control circuit unit is further configured to update threshold information according to the first performance information, wherein the threshold information is configured to determine a type of target data.
A memory control circuit unit, configured to control a rewritable non-volatile memory module, the memory control circuit unit comprising:
- a host interface, configured to be coupled to a host system;
- a memory interface, configured to be coupled to the rewritable non-volatile memory module;
- and
- a memory management circuit, coupled to the host interface and the memory interface,
- wherein the memory management circuit is configured to receive a first write command from the host system,
- the memory management circuit is further configured to instruct the rewritable non-volatile memory module to perform a first write operation according to the first write command,
- the memory management circuit is further configured to obtain first performance information corresponding to the first write operation, and
- the memory management circuit is further configured to update threshold information according to the first performance information, wherein the threshold information is configured to determine a type of target data.
Dependencies are inferred from the claim text.