# US 2020/0403501 A1 · Charge-pump boosting circuit > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2020/0403501 A1 - Document ID: US20200403501A1 - Status: Published application - Kind: A1 - Application number: 16/580,111 - Filed: 2019-09-24 - Published: 2020-12-24 - Earliest claimed: 2019-06-24 - Assignees: Realtek Semiconductor Corp. - Applicants: Realtek Semiconductor Corp. - Inventors: Chien-Ming Wu; Shih-Hsiung Huang; Liang-Huan Lei - Web page: https://patentgrep.com/patent/US20200403501A1 ## CPC - H02M 3/07: using capacitors charged and discharged alternately by semiconductor devices with control electrode {, e.g. charge pumps} - H03K 17/063: {in field-effect transistor switches} - H02M 1/08: Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters - H03K 2217/0081: Power supply means, e.g. to the switch driver - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract A charge-pump boosting is provided. A first resistor is connected to a first storage capacitor and receives a reference voltage, and a second resistor is connected to a second storage capacitor and receives the reference voltage. A first rectifying device is connected to the first storage capacitor and a voltage output. A first clock signal and the reference voltage are used to charge the first storage capacitor, and the first clock signal is used to selectively turn on the first rectifying device to charge the voltage output by the first storage capacitor. The second rectifying device is connected to the second storage capacitor and the voltage output. A second clock signal and the reference voltage are used to charge the second storage capacitor, and the second clock signal is used to selectively turn on the second rectifying device to charge the voltage output by the second storage capacitor. ## Claims ### Claim 1 A charge-pump boosting circuit, comprising: a first storage capacitor, one end of the first storage capacitor receiving a first clock signal, and the other end being connected to a first node; a second storage capacitor, one end of the second storage capacitor receiving a second clock signal, and the other end being connected to a second node; a first resistor respectively connected to the first node and a reference voltage; a second resistor respectively connected to the second node and the reference voltage; a first rectifying device connected to the first node and a voltage output, wherein the reference voltage passing through the first resistor and the first clock signal are used to charge the first storage capacitor, and the first clock signal being used to selectively turn on the first rectifying device to charge the voltage output by the first storage capacitor; and a second rectifying device connected to the second node and the voltage output, wherein the reference voltage passing through the second resistor and the second clock signal are used to charge the second storage capacitor, and the second clock signal being used to selectively turn on the second rectifying device to charge the voltage output by the second storage capacitor. ### Claim 2 (depends on 1) The charge-pump boosting circuit according to claim 1, wherein the first clock signal and the second clock signal are clock signals in opposite directions, and are used to charge the voltage output by the first storage capacitor and the second storage capacitor in turn. ### Claim 3 (depends on 2) The charge-pump boosting circuit according to claim 2, wherein when the first clock signal is at a high-level voltage, the first rectifying device is turned on and the voltage output is charged by the first storage capacitor; and when the second clock signal is at the high-level voltage, the second rectifying device is turned on and the voltage output is charged by the second storage capacitor. ### Claim 4 (depends on 3) The charge-pump boosting circuit according to claim 3, wherein an output voltage of the voltage output is obtained by subtracting a threshold voltage of the first rectifying device or the second rectifying device from a sum of the high-level voltage and the reference voltage. ### Claim 5 (depends on 1) The charge-pump boosting circuit according to claim 1, wherein the first rectifying device and the second rectifying device are P-channel metal-oxide-semiconductor (PMOS) field-effect transistors. ### Claim 6 (depends on 5) The charge-pump boosting circuit according to claim 5, wherein the first rectifying device is a first P-channel metal-oxide-semiconductor field-effect transistor, a source of the first P-channel metal-oxide-semiconductor field-effect transistor being connected to the first node, a gate and a drain being both connected to the voltage output; and the second rectifying device is a second P-channel metal-oxide-semiconductor field-effect transistor, a source of the second P-channel metal-oxide-semiconductor field-effect transistor being connected to the second node, and a gate and a drain being both connected to the voltage output. ### Claim 7 (depends on 1) The charge-pump boosting circuit according to claim 1, wherein the first rectifying device and the second rectifying device are N-channel metal-oxide-semiconductor (NMOS) field-effect transistors. ### Claim 8 (depends on 7) The charge-pump boosting circuit according to claim 7, wherein the first rectifying device is a first N-channel metal-oxide-semiconductor field-effect transistor, a source of the first N-channel metal-oxide-semiconductor field-effect transistor being connected to the voltage output, and a gate and a drain being both connected to first node; and the second rectifying device is a second N-channel metal-oxide-semiconductor field-effect transistor, a source of the second N-channel metal-oxide-semiconductor field-effect transistor being connected to the voltage output, and a gate and a drain being both connected to the second node. ### Claim 9 (depends on 1) The charge-pump boosting circuit according to claim 1, wherein the first rectifying device and the second rectifying device are diodes. ### Claim 10 (depends on 9) The charge-pump boosting circuit according to claim 9, wherein the first rectifying device is a first diode, a positive electrode of the first diode being connected to the first node, and a negative electrode being connected to the voltage output; and the second rectifying device is a second diode, a positive electrode of the second diode being connected to the second node, and a negative electrode being connected to the voltage output.