# US 2020/0403175 A1 · Electroluminescent device and method of manufacturing same, and electronic device

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- Number: US 2020/0403175 A1
- Document ID: US20200403175A1
- Status: Published application
- Kind: A1
- Application number: 16/613,436
- Filed: 2019-09-18
- Published: 2020-12-24
- Earliest claimed: 2019-06-20
- Assignees: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicants: Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Inventors: Yamin WANG
- Web page: https://patentgrep.com/patent/US20200403175A1

## CPC

- H10K 71/30: Doping active layers, e.g. electron transporting layers
- H10K 50/12: comprising dopants
- H10K 50/19: Tandem OLEDs
- H10K 71/166: {using selective deposition, e.g. using a mask}
- H10K 85/6572: {comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole}
- H10K 50/17: Carrier injection layers
- H10K 85/20: Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An electroluminescent (EL) device and a method of manufacturing same, and an electronic device. The EL device includes a first electrode, a second electrode, and a functional structural layer disposed between the first electrode and the second electrode. The functional structural layer includes a doping material and a graphene oxide material, and the doping material includes a plurality of conjugated ions.

## Claims

### Claim 1

An electroluminescent (EL) device, comprising:
a first electrode;
a second electrode; and
a functional structural layer disposed between the first electrode and the second electrode;
wherein the functional structural layer comprises a doping material and a graphite oxide material; and
wherein the doping material comprises a plurality of conjugated ions.

### Claim 2 (depends on 1)

The EL device of claim 1, wherein the functional structural layer comprises:
a hole injection layer disposed on the first electrode;
wherein material of the hole injection layer comprises the doping material and the graphite oxide material; and
wherein the doping material comprises the conjugated ions;
a hole transport layer disposed on the hole injection layer;
a luminescent layer disposed on the hole transport layer;
an electron transport layer disposed on the luminescent layer;
an electron injection layer disposed on the electron transport layer; and
the second electrode disposed on the electron injection layer.

### Claim 3 (depends on 1)

The EL device of claim 1, wherein material of the hole transport layer comprises at least one of tetraphenyl biphenyl diamine, biphenyl diester, or N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4-4′-diamine.

### Claim 4 (depends on 1)

The EL device of claim 1, wherein the doping material is N,N dimethyl diazoxide nitrate; and
wherein a weight ratio of the doping material to the graphite oxide material ranges from 1:1 to 1:99.

### Claim 5 (depends on 4)

The EL device of claim 4, wherein the N,N dimethyl diazoxide nitrate comprises at least one of the following structural formulas:

### Claim 6 (depends on 1)

A method of manufacturing the electroluminescent (EL) device of claim 1, comprising the following steps:
providing a conductive glass, wherein a surface of the conductive glass comprises the first electrode;
forming the functional structural layer on the surface of the conductive glass comprising the first electrode, wherein the functional structural layer comprises the doping material and the graphite oxide material, and the doping material comprises a plurality of conjugated ions; and
forming the second electrode on a side of the functional structural layer away from the first electrode by vacuum evaporation.

### Claim 7 (depends on 6)

The method of claim 6, wherein the step of providing the conductive glass comprises:
cleaning the conductive glass by deionized water;
cleaning the conductive glass by warm water for 30 to 50 minutes, wherein temperatures of the warm water range from 15 to 35 degrees Celsius;
drying the conductive glass; and
cleaning the conductive glass by a plasma cleaner for 6 to 15 minutes.

### Claim 8 (depends on 6)

The method of claim 6, wherein the step of forming the functional structural layer comprises:
providing the doping material and the graphite oxide material;
dissolving the doping material in deionized water to obtain a solution of the doping material;
dissolving the graphite oxide material in deionized water, and then vibrating the deionized water containing the graphite oxide material by ultrasonic waves to obtain a solution of the graphite oxide material;
doping the solution of doping material with the solution of graphite oxide material to obtain the doping solution, and dispersing the doping solution by ultrasonic waves for 2 to 4 hours at temperatures ranging from 30 to 50 degrees Celsius to obtain a mixing solution, wherein the mixing solution comprises 0.1% to 50% by mass of the doping material; and
coating the mixing solution on the surface of the conductive glass comprising the first electrode to form the hole injection layer.

### Claim 9 (depends on 8)

The method of claim 8, wherein the step of forming the functional structural layer further comprises:
fixing the conductive glass on a mask after the hole injection layer is formed;
placing the mask in a vacuum evaporation chamber, and then vacuuming the vacuum evaporation chamber by using a molecular pump until a vacuum degree of the vacuum evaporation chamber is in the range from 4.0×10−4 to 6.5×10−4 Pa; and
sequentially forming the hole transport layer, the luminescent layer, the electron transport layer, and the electron injection on the hole transport injection layer by vacuum evaporation.

### Claim 10 (depends on 1)

An electronic device, comprising the electroluminescent (EL) device of claim 1.