# US 2020/0403147 A1 · Spintronic device with synthetic antiferromagnet hybrid storage layer

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- Number: US 2020/0403147 A1
- Document ID: US20200403147A1
- Status: Published application
- Kind: A1
- Application number: 16/909,718
- Filed: 2020-06-23
- Published: 2020-12-24
- Earliest claimed: 2019-06-24
- Assignees: Imec Vzw
- Applicants: IMEC vzw
- Inventors: Sebastien Couet; Van Dai Nguyen
- Web page: https://patentgrep.com/patent/US20200403147A1

## CPC

- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- H10N 52/80: Constructional details
- H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10N 50/85: Materials of the active region
- H10N 52/00: Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00)
- G11C 11/1673: {Reading or sensing circuits or methods}
- G11C 11/1675: {Writing or programming circuits or methods}
- G11C 11/18: using Hall-effect devices
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

The disclosed technology relates generally to magnetic devices, and more particularly to magnetic memory and/or logic devices. In an aspect, a spintronic device comprises a tunnel barrier, a storage layer provided on the tunnel barrier, and a seed layer provided on the storage layer. The storage layer includes a first magnetic layer having a first crystallographic orientation provided on the tunnel barrier, a spacer layer provided on the first magnetic layer, a second magnetic layer having a second crystallographic orientation provided on the spacer layer and exchange coupled to the first magnetic layer, an antiferromagnetic coupling layer provided on the second magnetic layer, and a third magnetic layer having the second crystallographic orientation provided on the antiferromagnetic coupling layer and antiferromagnetically coupled to the second magnetic layer.

## Claims

### Claim 1

A spintronic device, comprising:
a tunnel barrier;
a storage layer formed on the tunnel barrier, wherein the storage layer includes:
a first magnetic layer having a first crystallographic orientation formed on the tunnel barrier,
a spacer layer formed on the first magnetic layer,
a second magnetic layer having a second crystallographic orientation formed on the spacer layer and exchange-coupled to the first magnetic layer,
an antiferromagnetic coupling layer formed on the second magnetic layer, and
a third magnetic layer having the second crystallographic orientation formed on the antiferromagnetic coupling layer and antiferromagnetically coupled to the second magnetic layer; and
a seed layer formed on the third magnetic layer.

### Claim 2 (depends on 1)

The spintronic device according to claim 1, wherein the first magnetic layer is a CoFeB layer or a FeB layer.

### Claim 3 (depends on 1)

The spintronic device according to claim 1, wherein the second magnetic layer is a Co-based layer.

### Claim 4 (depends on 1)

The spintronic device according to claim 1, wherein the third magnetic layer is a Co-based layer.

### Claim 5 (depends on 1)

The spintronic device according to claim 1, wherein:
the first crystallographic orientation is a (100) orientation, and/or
the second crystallographic orientation is a (111) orientation.

### Claim 6 (depends on 1)

The spintronic device according to claim 1, wherein one or both of the first magnetic layer and the second magnetic layer have a thickness of 0.4 nm-1.5 nm.

### Claim 7 (depends on 1)

The spintronic device according to claim 1, wherein the antiferromagnetic coupling layer is a Ru layer, an Ir layer, or a Rh layer.

### Claim 8 (depends on 1)

The spintronic device according to claim 1, wherein the spacer layer is configured to break a texture between the different crystallographic orientations of the first magnetic layer and the second magnetic layer.

### Claim 9 (depends on 1)

The spintronic device according to claim 1, wherein the spacer layer is a heavy-metal layer or a heavy-metal transition-metal alloy layer.

### Claim 10 (depends on 1)

The spintronic device according to claim 1, wherein the seed layer is a heavy-metal layer comprising Ta, W or Pt.

### Claim 11 (depends on 1)

The spintronic device according to claim 1, wherein the seed layer is a topological insulator comprising Bi2Se3 or BixSb1-x.

### Claim 12 (depends on 1)

The spintronic device according to claim 1, wherein the seed layer is a spin-orbit-torque generating layer.

### Claim 13 (depends on 1)

The spintronic device according to claim 1, wherein the tunnel barrier is a MgO-based layer.

### Claim 14 (depends on 1)

The spintronic device according to claim 1, further comprising a fixed layer on an opposite side of the tunnel barrier relative to the storage layer.

### Claim 15 (depends on 1)

The spintronic device according to claim 1, wherein the spintronic device is a three-terminal device comprising two of three terminals connected to the seed layer.

### Claim 16 (depends on 15)

The spintronic device according to claim 15, wherein one of the three terminals of the spintronic device is connected to a fixed layer comprising CoFeB and formed on an opposite side of the tunnel barrier relative to the storage layer.

### Claim 17 (depends on 1)

The spintronic device according to claim 1, wherein the spintronic device is a spin torque transfer magnetic random access memory (MRAM) device, a spin orbit torque MRAM device, or a magnetic racetrack memory device.

### Claim 18 (depends on 1)

The spintronic device according to claim 1, wherein the spintronic device is a domain wall logic device.