# US 2020/0403134 A1 · Thermoelement (variants)

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- Number: US 2020/0403134 A1
- Document ID: US20200403134A1
- Status: Published application
- Kind: A1
- Application number: 16/978,726
- Filed: 2018-03-21
- Published: 2020-12-24
- Earliest claimed: 2018-03-13
- Assignees: Obschestvo S Ogranichennoi Otvetstvennostyu "Rustek"
- Applicants: Obschestvo S Ogranichennoi Otvetstvennostyu "Rustek"
- Inventors: Zinovy Moiseevich DASHEVSKY; Lev Dmitrievich DUDKIN; Sergey Yakovlevich SKIPIDAROV
- Web page: https://patentgrep.com/patent/US20200403134A1

## CPC

- H10N 10/853: comprising arsenic, antimony or bismuth (H10N10/852 takes precedence)
- H10N 10/00: Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N19/00)
- H10N 10/852: comprising tellurium, selenium or sulfur
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

The present invention relates to thermoelectric power generating devices using thermoelectric elements and thereby generating electricity realizing direct conversion of heat to electric power due to difference in temperature. The present invention is targeted on improving thermoelectric efficiency of a thermoelectric device. According to the first variant of the present invention, technical result is achieved by that a) in thermoelectric element consisting of p-type leg and n-type leg jointed in serial electrical circuit, p-type leg is made of polycrystalline textured semiconductor Bi2Te3—Sb2Te3 alloy with high thermoelectric efficiency in the operating temperature range T>100° C. and b) in p-type leg, heat flux is directed from the hot end to the cold end parallel the crystallographic axis C. According to the second variant of the present invention, technical result is achieved by that a) in thermoelectric element consisting of p-type leg and n-type leg jointed in serial electrical circuit, p-type leg is made of polycrystalline textured semiconductor Bi2Te3—Sb2Te3 alloy and built up of two parts which are in perfect electrical and thermal contact and b) in part of p-type leg at low-temperature end of thermoelectric element, heat flux is directed from the hot end to the cold end transverse the crystallographic axis C, while in part of p-type leg at high-temperature end of thermocouple, heat flux is directed from the hot end to the cold end parallel the crystallographic axis C.

## Claims

### Claim 1

A thermoelectric element comprising a p-type leg and a n-type leg connected in series in an electrical circuit, the p-type leg being made of a polycrystalline textured semiconductor Bi2Te3—Sb2Te3 alloy, wherein a heat flux from a hot end to a cold end of the p-type leg is directed parallel to a crystallographic axis C, whereby increasing thermoelectric efficiency in operating temperature range T>100° C.

### Claim 2

A thermoelectric element comprising a p-type leg and a n-type leg connected in series in an electrical circuit, wherein the p-type leg is made of a polycrystalline textured semiconductor Bi2Te3—Sb2Te3 alloy and consists of two parts that are in electrical and thermal contact with each other, and wherein in the part of the p-type leg at a low-temperature end of the thermoelectric element, heat flux is directed from a hot end to a cold end perpendicular to a crystallographic axis C, while in the part of the p-type leg at a high-temperature end of the thermoelectric element, heat flux is directed from the hot end to the cold end parallel to the crystallographic axis C.