# US 2020/0403121 A1 · Indium gallium nitride red light emitting diode and method of making thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2020/0403121 A1 - Document ID: US20200403121A1 - Status: Published application - Kind: A1 - Application number: 17/008,693 - Filed: 2020-09-01 - Published: 2020-12-24 - Earliest claimed: 2016-10-24 - Assignees: Glo AB - Applicants: Glo AB - Inventors: Fariba Danesh; Richard P. Schneider, JR.; Fan Ren; Michael Jansen; Nathan Gardner - Web page: https://patentgrep.com/patent/US20200403121A1 ## CPC - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/01: Manufacture or treatment - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/833: Transparent materials - H10H 20/856: Reflecting means - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10P 14/3216: {Nitrides} - H10P 14/3416: {Nitrides} - H10W 90/00: Package configurations - H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies - H10H 20/815: having stress relaxation structures, e.g. buffer layers - H10H 20/818: within the light-emitting regions - H10W 72/0198: {batch processes} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer. ## Claims ### Claim 1 A red-light emitting diode, comprising: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion, the light emitting region comprising: a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting indium gallium nitride layer; and a GaN barrier layer located on the III-nitride layer, wherein the light emitting diode comprises at least one feature selected from: (a) the light emitting diode comprises a nanowire device; or (b) the light emitting region consists of one or two quantum wells; or (c) the III-nitride layer comprises an aluminum gallium nitride layer which has a composition AlyGa(1-y)N, where y is in a range from 0.3 to 1.0; or (d) a UV emitting InGaN/GaN superlattice is located between the n-doped portion and the light emitting region. ### Claim 2 (depends on 1) The light emitting diode of claim 1, wherein the n-doped portion comprises a single crystalline n-doped GaN portion and the p-doped portion comprises a p-doped III-nitride layer which comprises a p-doped aluminum gallium nitride layer. ### Claim 3 (depends on 1) The light emitting diode of claim 1, further comprising at least one strain-modulating layer located between the single crystalline n-doped GaN layer and light emitting region. ### Claim 4 (depends on 3) The light emitting diode of claim 3, wherein the at least one strain-modulating layer comprises a plurality of strain-modulating layer stacks that is located on the single crystalline n-doped GaN layer and comprises a respective intervening indium gallium nitride layer and a respective intervening GaN layer. ### Claim 5 (depends on 1) The light emitting diode of claim 1, wherein: the light-emitting indium gallium nitride layer has a composition of InxGa(1-x)N, wherein x is in a range from 0.26 to 0.55; and the light-emitting indium gallium nitride layer has a thickness in a range from 3 nm to 7 nm. ### Claim 6 (depends on 5) The light emitting diode of claim 5, wherein the p-doped III-nitride layer comprises a p-doped aluminum gallium nitride layer which has a thickness in a range from 0.5 nm to 5.0 nm and the GaN barrier layer has a thickness in a range from 5 nm to 20 nm. ### Claim 7 (depends on 6) The light emitting diode of claim 6, further comprising a p-doped GaN layer located on the p-doped aluminum gallium nitride layer. ### Claim 8 (depends on 4) The light emitting diode of claim 4, wherein: the single crystalline n-doped GaN portion is a single crystalline n-doped GaN layer having a planar top surface; and each layer within the plurality of strain-modulating layer stacks, the light-emitting indium gallium nitride layer, the III-nitride layer, and the GaN barrier layer are planar layers having a respective top surface and a respective bottom surface that are parallel to the planar top surface of the single crystalline n-doped GaN layer. ### Claim 9 (depends on 1) The light emitting diode of claim 1 wherein the light emitting diode comprises feature (a). ### Claim 10 (depends on 1) The light emitting diode of claim 1 wherein the light emitting diode comprises feature (b). ### Claim 11 (depends on 1) The light emitting diode of claim 1 wherein the light emitting diode comprises feature (c). ### Claim 12 (depends on 1) The light emitting diode of claim 1 wherein the light emitting diode comprises feature (d). ### Claim 13 (depends on 1) The light emitting diode of claim 1 wherein the light emitting diode comprises two or more of features (a) to (d). ### Claim 14 (depends on 1) The light emitting diode of claim 1, wherein the red-light emitting diode comprises a first light emitting diode which has a width between 1 and 100 microns located in a direct view display on a backplane, which further comprises a second green-light emitting light emitting diode a third blue-light emitting diode located on the backplane. ### Claim 15 (depends on 1) The light emitting diode of claim 1, wherein the light-emitting indium gallium nitride layer emits light at a peak wavelength between 610 and 650 nm under electrical bias thereacross. ### Claim 16 A nanowire red-light emitting diode, comprising: an n-doped nanowire core portion; a p-doped portion; and a light emitting shell located on the n-doped nanowire core under the p-doped portion, the light emitting shell comprising: a light-emitting indium gallium nitride shell emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride shell located on the light-emitting indium gallium nitride shell; and a GaN barrier shell located on the III-nitride shell. ### Claim 17 (depends on 16) The nanowire red-light emitting diode of claim 16, wherein the III-nitride layer comprises a p-doped aluminum gallium nitride layer. ### Claim 18 A method of manufacturing a direct view display device, comprising: providing first light emitting diodes, wherein each of the first light emitting diodes comprises an epitaxial material layer stack configured to emit light at a first peak wavelength in a range from 600 nm to 750 nm, wherein the epitaxial material layer stack comprises, from one side to another: a single crystalline n-doped GaN portion, at least one strain-modulating layer located on the single crystalline n-doped GaN layer, a light-emitting indium gallium nitride layer located on the plurality of strain-modulating layer stacks and emitting light at the first peak wavelength under electrical bias thereacross, a GaN barrier layer, and a p-doped aluminum gallium nitride layer; providing second light emitting diodes configured to emit light at a second peak wavelength in a range from 400 nm to 600 nm; and bonding the first light emitting diodes and the second light emitting diodes to a backplane to form an array of pixels. ### Claim 19 (depends on 18) The method of claim 18, wherein the at least one strain-modulating layer comprises a plurality of strain-modulating layer stacks that are located on the single crystalline n-doped GaN layer and comprise a respective intervening indium gallium nitride layer and a respective intervening GaN layer. ### Claim 20 (depends on 18) The method of claim 18, wherein: an effective hexagonal-plane lattice constant of each strain-modulating layer stack of the plurality of strain-modulating layer stacks monotonically increases with a distance from the single crystalline n-doped GaN portion; the light-emitting indium gallium nitride layer has a composition of InxGa(1-x)N, wherein x is in a range from 0.26 to 0.55; the light-emitting indium gallium nitride layer has a thickness in a range from 3 nm to 7 nm; the epitaxial material layer stack further comprises an aluminum gallium nitride layer having a composition of AlyGa(1-y)N, wherein y is in a range from 0.3 to 1.0; and the aluminum gallium nitride layer has a thickness in a range from 0.2 nm to 3.0 nm.