# US 2020/0403108 A1 · Photoelectric conversion device and method of manufacturing photoelectric conversion device

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- Number: US 2020/0403108 A1
- Document ID: US20200403108A1
- Status: Published application
- Kind: A1
- Application number: 17/013,248
- Filed: 2020-09-04
- Published: 2020-12-24
- Earliest claimed: 2019-03-19
- Assignees: Kabushiki Kaisha Toshiba; Toshiba Energy Systems & Solutions Corporation
- Applicants: Kabushiki Kaisha Toshiba; Toshiba Energy Systems & Solutions Corporation
- Inventors: Akio AMANO; Kenji TODORI; Kenji FUJINAGA
- Web page: https://patentgrep.com/patent/US20200403108A1

## CPC

- H10F 77/211: {for photovoltaic cells}
- H10F 71/138: {Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes}
- H10F 77/12: Active materials
- H10F 77/244: {made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers}
- H10K 30/80: Constructional details
- H10K 39/10: Organic photovoltaic [PV] modules; Arrays of single organic PV cells
- H10K 39/12: Electrical configurations of PV cells, e.g. series connections or parallel connections
- H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A photoelectric conversion device includes: a substrate; a first photoelectric conversion element including a first substrate electrode, a first photoelectric conversion layer, and a first counter electrode; a second photoelectric conversion element including a second substrate electrode, a second photoelectric conversion layer, and a second counter electrode; and a connection including a groove, a conductive portion and a conductive layer, the conductive portion being provided in the groove and including a part of the first counter electrode, and the conductive portion and the conductive layer electrically connecting the first counter electrode and the second substrate electrode. The conductive layer overlaps the first counter electrode on an edge of the groove, and a total thickness of the conductive portion and the conductive layer is larger than a thickness of the first counter electrode.

## Claims

### Claim 1

A photoelectric conversion device, comprising:
a substrate;
a first photoelectric conversion element including
a first substrate electrode provided on the substrate,
a first photoelectric conversion layer disposed on the first substrate electrode, and
a first counter electrode disposed on the first photoelectric conversion layer;
a second photoelectric conversion element including
a second substrate electrode provided adjacent to the first substrate electrode on the substrate and electrically insulated from the first substrate electrode,
a second photoelectric conversion layer disposed on the second substrate electrode, and
a second counter electrode disposed on the second photoelectric conversion layer; and
a connection including a groove, a conductive portion and a conductive layer, the groove penetrating the second photoelectric conversion layer from a surface to expose a surface of the second substrate electrode from the second photoelectric conversion layer, the conductive portion being provided in the groove and including a part of the first counter electrode, the conductive layer being provided on the conductive portion, and the conductive portion and the conductive layer electrically connecting the first counter electrode and the second substrate electrode, wherein
the conductive layer overlaps the first counter electrode on an edge of the groove, and a total thickness of the conductive portion and the conductive layer is larger than a thickness of the first counter electrode.

### Claim 2 (depends on 1)

The device according to claim 1, wherein
the first counter electrode has a light transmittance of 10% or more.

### Claim 3 (depends on 1)

The device according to claim 1, wherein
the second substrate electrode contains at least one conductive metal oxide selected from the group consisting of indium oxide, zinc oxide, tin oxide, indium tin oxide, fluorine-doped tin oxide, gallium-doped zinc oxide, aluminum-doped zinc oxide, indium-zinc oxide, and an indium-gallium-zinc oxide.

### Claim 4 (depends on 1)

The device according to claim 1, wherein
an average thickness of the conductive layer is 30 nm or more and 1000 nm or less.

### Claim 5 (depends on 1)

The device according to claim 1, wherein
a width of the conductive layer is larger than a width of the groove.

### Claim 6 (depends on 1)

The device according to claim 1, wherein
the photoelectric conversion layer has a perovskite compound represented by a composition formula: ABX3, where A denotes at least one cation selected from the group consisting of monovalent cations, B denotes at least one cation selected from the group consisting of divalent cations, and X denotes at least one selected from the group consisting of halogen anions.

### Claim 7

A photoelectric conversion device comprising:
a substrate;
a first photoelectric conversion element including
a first substrate electrode provided on the substrate,
a first photoelectric conversion layer disposed on the first substrate electrode, and
a first counter electrode disposed on the first photoelectric conversion layer;
a second photoelectric conversion element including
a second substrate electrode provided adjacent to the first substrate electrode on the substrate and electrically insulated from the first substrate electrode,
a second photoelectric conversion layer disposed on the second substrate electrode, and
a second counter electrode disposed on the second photoelectric conversion layer; and
a connection including a groove and a conductive layer, the groove penetrating the second photoelectric conversion layer from a surface to expose a surface of the second substrate electrode from the second photoelectric conversion layer, the conductive layer being provided in the groove and electrically connecting the first counter electrode and the second substrate electrode, wherein
the conductive layer overlaps the first counter electrode on an edge of the groove and is thicker than the first counter electrode.

### Claim 8

A method of manufacturing a photoelectric conversion device, comprising:
forming a first and a second substrate electrode onto a substrate, the second substrate electrode being adjacent to the first substrate electrode and electrically insulated from the first substrate electrode;
forming a photoelectric conversion layer onto the substrate to overlap the first substrate electrode and the second substrate electrode;
scribing the photoelectric conversion layer to form a groove penetrating the photoelectric conversion layer from a surface to expose a surface of the second substrate electrode from the photoelectric conversion layer;
forming a first and a second counter electrode respectively corresponding to the first and the second substrate electrode onto the photoelectric conversion layer divided by the groove while forming a conductive portion including a part of the first counter electrode into the groove; and
forming a conductive layer onto the conductive portion, the conductive layer overlapping the first counter electrode on an edge of the groove, a total thickness of the conductive portion and the conductive layer being larger than a thickness of the first counter electrode, the conductive portion and the conductive layer electrically connecting the first counter electrode and the second substrate electrode.

### Claim 9

A method of manufacturing a photoelectric conversion device, comprising:
forming a first and a second substrate electrode onto a substrate, the second substrate electrode being adjacent to the first substrate electrode and electrically insulated from the first substrate electrode;
forming a photoelectric conversion layer onto the substrate and overlap the first and second substrate electrodes;
forming a counter electrode onto the photoelectric conversion layer;
scribing the photoelectric conversion layer and the counter electrode to form a groove penetrating the photoelectric conversion layer from a surface to expose a surface of the second substrate electrode from the photoelectric conversion layer, while to form a first counter electrode and a second counter electrode in correspondence to the first substrate electrode and the second substrate electrode; and
forming a conductive layer into the groove, the conductive layer being thicker than the first counter electrode, the conductive layer overlapping the first counter electrode on an edge of the groove, the conductive layer electrically connecting the first counter electrode and the second substrate electrode.