# US 2020/0403102 A1 · Electrode structure and manufacturing method thereof, thin film transistor, and array substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2020/0403102 A1 - Document ID: US20200403102A1 - Status: Published application - Kind: A1 - Application number: 16/326,256 - Filed: 2018-06-01 - Published: 2020-12-24 - Earliest claimed: 2017-08-30 - Assignees: Boe Technology Group Co., Ltd. - Applicants: Boe Technology Group Co., Ltd. - Inventors: Dongfang WANG; Guangcai YUAN - Web page: https://patentgrep.com/patent/US20200403102A1 ## CPC - H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device} - H10D 30/6737: {characterised by the electrode materials} - H10D 30/6739: {Conductor-insulator-semiconductor electrodes} - H10D 30/6743: {Silicon} - H10D 64/01: Manufacture or treatment - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10D 64/666: {the conductor further comprising additional layers} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Embodiments of the present invention disclose an electrode structure, a method of fabricating the same, a thin film transistor, and an array substrate. An electrode structure is provided that comprises: an electrical conductor (23 or 25) including a protective layer and a conductive layer (10), the protective layer comprising: a first protective layer (11 and 12) disposed on a surface of the conductive layer and a second protective layer (13) disposed on at least a side face of the conductive layer, the second protective layer being configured for isolating the conductive layer from the outside. ## Claims ### Claim 1 An electrode structure comprising: a protective layer and a conductive layer; wherein the protective layer comprises: a first protective layer disposed on a surface of the conductive layer, and a second protective layer disposed on a side face of the conductive layer for isolating the conductive layer from the outside. ### Claim 2 (depends on 1) The electrode structure according to claim 1, wherein materials of the first protective layer and the second protective layer are different, and the second protective layer is configured to block oxygen and/or hydrogen. ### Claim 3 (depends on 1) The electrode structure according to claim 1, wherein the first protective layer comprises a first metal layer and a second metal layer, the first metal layer being disposed on a side of the conductive layer adjacent to a substrate, the second metal layer is disposed on a side of the conductive layer facing away from the substrate. ### Claim 4 (depends on 3) The electrode structure according to claim 3, wherein the second protective layer is configured to cover the side face of the conductive layer. ### Claim 5 (depends on 3) The electrode structure of claim 3, wherein the second protective layer is configured to completely cover the side face of the conductive layer. ### Claim 6 (depends on 3) The electrode structure according to claim 3, wherein the second protective layer is configured to cover sides of the first metal layer, the conductive layer, and the second metal layer. ### Claim 7 (depends on 3) The electrode structure according to claim 3, wherein materials of the first metal layer and the second metal layer comprise: molybdenum. ### Claim 8 (depends on 3) The electrode structure according to claim 3, wherein materials of the first metal layer and the second metal layer are different. ### Claim 9 (depends on 1) The electrode structure claim 1, wherein material of the conductive layer comprises aluminum, and material of the second protective layer comprises aluminum nitride. ### Claim 10 (depends on 1) The electrode structure according to claim 1, wherein the second protective layer has a thickness of 5 to 50 nm. ### Claim 11 (depends on 1) The electrode structure of claim 1, wherein the conductive layer comprises a metal material. ### Claim 12 (depends on 1) A thin film transistor comprising an electrode structure according to claim 1, wherein at least one of the following comprises the electrode structure: gate electrode, source electrode, drain electrode, or wiring of the thin film transistor. ### Claim 13 (depends on 12) An array substrate comprising the thin film transistor of claim 12. ### Claim 14 A method for fabricating an electrode structure, comprising: forming a conductive layer on a substrate and a first protective layer for the conductive layer; and forming a second protective layer covering at least a side of the conductive layer for isolating the conductive layer from the outside. ### Claim 15 (depends on 14) The method of claim 14, wherein materials of the first protective layer and the second protective layer are different, the second protective layer is configured to block oxygen and/or hydrogen. ### Claim 16 (depends on 14) The method of claim 14, wherein forming the conductive layer on the substrate and the first protective layer on a surface of the conductive layer comprises: forming a stack of a first metal film, a conductive film, and a second metal film on the substrate; patterning the stack to form a first metal layer, the conductive layer, and a second metal layer, wherein the first protective layer comprises the first metal layer and the second metal layer. ### Claim 17 (depends on 16) The method of claim 16, wherein forming the second protective layer comprises: processing the conductive layer with nitrogen plasma to form the second protective layer. ### Claim 18 (depends on 16) The method of claim 16, wherein forming the second protective layer comprises: depositing a protective material film on the substrate on which the first metal layer, the conductive layer and the second metal layer are formed, the protective material film covering at least the second metal layer and sides of the first metal layer, the conductive layer and the second metal layer; and patterning the protective material film by a patterning process so that a portion of the protective material film which is on the sides of the first metal layer, the conductive layer, and the second metal layer is remained to form the second protective layer. ### Claim 19 (depends on 14) The method of claim 14, wherein at least one of the following comprises the electrode structure: a gate electrode, a source electrode, a drain electrode, or a wiring of a thin film transistor. ### Claim 20 (depends on 16) The method of claim 16, wherein the conductive film is formed of metal material.