# US 2020/0402933 A1 · Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation

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- Number: US 2020/0402933 A1
- Document ID: US20200402933A1
- Status: Published application
- Kind: A1
- Application number: 17/010,479
- Filed: 2020-09-02
- Published: 2020-12-24
- Earliest claimed: 2018-12-04
- Assignees: Cree, Inc.
- Applicants: Cree, Inc.
- Inventors: Frank Trang; Haedong Jang; Zulhazmi Mokhti
- Web page: https://patentgrep.com/patent/US20200402933A1

## CPC

- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H03H 7/38: Impedance-matching networks
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 44/00: Electrical arrangements for controlling or matching impedance
- H10W 72/075: {of bond wires}
- H10W 74/016: {using moulds}
- H10W 74/124: {the encapsulations having cavities other than that occupied by chips}
- H10W 44/206: {Wires}
- H10W 44/234: {Arrangements for impedance matching}
- H10W 72/5366: {the bond wires having kinks}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 90/759: {between a chip and a laterally-adjacent discrete passive device}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

Packaged transistor devices are provided that include a transistor on a base of the packaged transistor device, the transistor comprising a control terminal and an output terminal, a first bond wire electrically coupled between an input lead and the control terminal of the transistor, a second bond wire electrically coupled between an output lead and the output terminal of the transistor, and an isolation material that is and physically between the first bond wire and the second bond wire, wherein the isolation material is configured to reduce a coupling between the first bond wire and the second bond wire.

## Claims

### Claim 1

A transistor device, comprising:
a transistor;
a first inductive element electrically coupled to a first terminal of the transistor;
a second inductive element electrically coupled to a second terminal of the transistor; and
a conductive isolation material that is physically between the first inductive element and the second inductive element, wherein the conductive isolation material is configured to reduce a coupling between the first inductive element and the second inductive element.

### Claim 2 (depends on 1)

The transistor device of claim 1, further comprising a package that houses the transistor,
wherein at least a portion of the conductive isolation material is inside the package.

### Claim 3 (depends on 2)

The transistor device of claim 2, wherein the package comprises an air cavity, and
wherein at least a portion of the first inductive element and at least a portion of the second inductive element extend into the air cavity.

### Claim 4 (depends on 1)

The transistor device of claim 1, further comprising a package that houses the transistor, with a first lead and a second lead extending from the package,
wherein the first inductive element is a first bond wire that is electrically coupled between the first lead and the first terminal, and
wherein the second inductive element is a second bond wire that is electrically coupled between the second lead and the second terminal.

### Claim 5 (depends on 1)

The transistor device of claim 1, wherein the conductive isolation material comprises a plurality of third bond wires.

### Claim 6 (depends on 5)

The transistor device of claim 5, wherein the first terminal is on a first side of the transistor and the second terminal is on a second side of the transistor, opposite the first side,
wherein the plurality of third bond wires extend substantially perpendicularly to the first inductive element.

### Claim 7 (depends on 5)

The transistor device of claim 5, wherein a first portion of a first one of the third bond wires extends above the transistor at a first height, and
wherein a second portion of a second one of the third bond wires extends above the transistor at a second height that is greater than the first height.

### Claim 8 (depends on 1)

The transistor device of claim 1, wherein the conductive isolation material comprises a metal wall.

### Claim 9 (depends on 8)

The transistor device of claim 8, wherein the metal wall extends in a direction substantially perpendicular to a top surface of the transistor.

### Claim 10

A transistor device, comprising:
a package;
a transistor within the package;
a first circuit that that is within the package and electrically connected to a first terminal of the transistor by a first connective element;
a second circuit that is within the package and electrically connected to a second terminal of the transistor by a second connective element; and
an isolation material that is within the package and between the first connective element and the second connective element, wherein the isolation material is configured to reduce a coupling between the first connective element and the second connective element.

### Claim 11 (depends on 10)

The transistor device of claim 10, wherein the isolation material is a magnetic isolation material, a dielectric isolation material, and/or a conductive isolation material that is physically separated from the first connective element and the second connective element.

### Claim 12 (depends on 10)

The transistor device of claim 10, wherein the first circuit comprises an impedance matching circuit and/or a harmonic reduction circuit.

### Claim 13 (depends on 10)

The transistor device of claim 10, wherein the first connective element and/or the second connective element comprises a bond wire.

### Claim 14 (depends on 10)

The transistor device of claim 10, wherein the isolation material comprises a bond wire.

### Claim 15 (depends on 10)

The transistor device of claim 10, wherein the isolation material comprises a plurality of metal segments.

### Claim 16

A transistor device, comprising:
a package;
a transistor die within the package;
a first inductive element extending within the package in a first direction on the transistor die to electrically couple to a first terminal of the transistor die;
a second inductive element extending within the package in the first direction on the transistor die to electrically couple to a second terminal of the transistor die; and
a conductive isolation material extending within the package in a second direction on the transistor die between the first inductive element and the second inductive element, wherein the second direction is substantially perpendicular to the first direction.

### Claim 17 (depends on 16)

The transistor device of claim 16, wherein the conductive isolation material comprises at least one bond wire.

### Claim 18 (depends on 17)

The transistor device of claim 17, wherein the first terminal is on a first side of the transistor die and the second terminal is on a second side of the transistor die, opposite the first side,
wherein the at least one bond wire extends from a third side of the transistor die to a fourth side of the transistor die, and
wherein the third side and fourth side of the transistor die are different than the first side and the second side.

### Claim 19 (depends on 17)

The transistor device of claim 17, wherein the at least one bond wire is coupled to a ground pad on the transistor die.

### Claim 20 (depends on 16)

The transistor device of claim 16, further comprising a first circuit within the package,
wherein the first circuit comprises an impedance matching circuit and/or a harmonic reduction circuit, and
wherein the first inductive element is part of the first circuit.