# US 2020/0402811 A1 · Features for Improving Process Uniformity in a Millisecond Anneal System

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- Number: US 2020/0402811 A1
- Document ID: US20200402811A1
- Status: Published application
- Kind: A1
- Application number: 17/012,146
- Filed: 2020-09-04
- Published: 2020-12-24
- Earliest claimed: 2015-12-30
- Assignees: Mattson Technology, Inc.; Beijing E-Town Semiconductor Technology Co., Ltd.
- Applicants: Mattson Technology, Inc.; Beijing E-Town Semiconductor Technology Co., Ltd.
- Inventors: Alexandr Cosceev; Markus Hagedorn; Christian Pfahler
- Web page: https://patentgrep.com/patent/US20200402811A1

## CPC

- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H05B 3/0047: {for semiconductor manufacture}
- H10P 34/422: {using incoherent radiation}
- H10P 72/0434: {mainly by convection}
- H10P 72/0436: {mainly by radiation}
- H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers}
- H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support}
- F27B 5/04: adapted for treating the charge in vacuum or special atmosphere
- F27B 5/16: Arrangements of air or gas supply devices
- F27B 17/0025: {specially adapted for treating semiconductor wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- F27B: FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS

## Abstract

Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) changing the pressure inside the processing chamber of the millisecond anneal system; (2) manipulating the irradiation distribution by way of the refracting effect of a water window in the millisecond anneal system; (3) adjusting the angular positioning of the substrate; and/or (4) configuring the shape of the reflectors used in the millisecond anneal system.

## Claims

### Claim at position 1

1-11. (canceled)

### Claim 12

A process for thermally treating a substrate in a millisecond anneal system, comprising:
obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system, the millisecond anneal system having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber;
adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system based at least in part on the temperature profile.

### Claim 13 (depends on 12)

The process of claim 12, wherein the wedge reflector is located on a chamber wall proximate the wafer plane plate.

### Claim 14 (depends on 13)

The process of claim 13, wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting a wedge angle for the wedge reflector.

### Claim 15 (depends on 13)

The process of claim 13, wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting a height for the wedge reflector.

### Claim 16 (depends on 13)

The process of claim 13, wherein the edge reflector is located in the wafer plane plate.

### Claim 17 (depends on 12)

The process of claim 12, wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting a surface profile for the edge reflector.

### Claim 18 (depends on 12)

The process of claim 12, wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting, with one or more controllers, a position of wedge reflector relative to the substrate during processing of the substrate.

### Claim 19

A process for thermally treating a substrate in a millisecond anneal system, comprising:
obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system, the millisecond anneal system having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber, the wafer plane plate comprising a non-rotating substrate support;
determining an angular location for placement of a device substrate in a processing chamber of the millisecond anneal system, the angular position determined based at least in part on the temperature profile.

### Claim 20 (depends on 19)

The process of claim 19, wherein the angular position is determined based at least in part on a location of one or more support pins in the millisecond anneal system.