# US 2020/0402467 A1 · Display device

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- Number: US 2020/0402467 A1
- Document ID: US20200402467A1
- Status: Published application
- Kind: A1
- Application number: 16/849,575
- Filed: 2020-04-15
- Published: 2020-12-24
- Earliest claimed: 2019-06-19
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., LTD.
- Inventors: Hye Lim CHOI; Yeon Keon MOON; Joon Seok PARK; Myoung Hwa KIM; Tae Sang KIM; Hyung Jun KIM; Geun Chul PARK; Kyung Jin JEON
- Web page: https://patentgrep.com/patent/US20200402467A1

## CPC

- G09G 3/3233: with pixel circuitry controlling the current through the light-emitting element
- G09G 3/3291: in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
- G09G 3/3266: Details of drivers for scan electrodes
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1201: {Manufacture or treatment}
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/126: Shielding, e.g. light-blocking means over the TFTs
- G09G 2300/0842: forming a memory circuit, e.g. a dynamic memory with one capacitor
- H10D 30/6723: {having light shields}
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light emitting element and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from a respective data line of the data lines, the first transistor includes a first active layer including an oxide semiconductor containing indium (In), and a content of the indium in the oxide semiconductor of the first active layer is 70 at % or more.

## Claims

### Claim 1

A display device, comprising:
pixels connected to scan lines and data lines intersecting the scan lines,
wherein
each of the pixels includes a light emitting element and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from a respective data line of the data lines,
the first transistor includes a first active layer including an oxide semiconductor including indium (In), and
a content of the indium in the oxide semiconductor of the first active layer is 70 at % or more.

### Claim 2 (depends on 1)

The display device of claim 1, wherein an amount of the indium (In) is greater than or equal to about 70 at %.

### Claim 3 (depends on 1)

The display device of claim 1, wherein the oxide semiconductor includes indium-tin oxide (ITO) or indium-tin-gallium oxide (ITGO).

### Claim 4 (depends on 3)

The display device of claim 3, wherein a sum of an amount of indium (In) and an amount of tin (Sn) in the oxide semiconductor is greater than or equal to about 95 at %.

### Claim 5 (depends on 4)

The display device of claim 4, wherein the amount of tin (Sn) in the oxide semiconductor is in the range of about 5% to about 20%.

### Claim 6 (depends on 3)

The display device of claim 3, wherein the first active layer includes a first region, and a second region having a higher concentration of oxygen atoms than that of the first region.

### Claim 7 (depends on 6)

The display device of claim 6, wherein the second region is located on an upper surface of the first active layer and at least one side surface of the first active layer.

### Claim 8 (depends on 1)

The display device of claim 1, wherein the first active layer includes a first conductor region, a second conductor region and a channel region disposed between the first conductor region and the second conductor region.

### Claim 9 (depends on 8)

The display device of claim 8, wherein the first transistor further includes:
a first light shielding layer disposed below the first active layer;
a first gate electrode disposed on the first active layer;
a first source electrode in contact with the first conductor region through a first contact hole passing through a first insulating layer disposed on the first gate electrode; and
a first drain electrode in contact with the second conductor region through a second contact hole passing through the first insulating layer.

### Claim 10 (depends on 9)

The display device of claim 9, wherein the first gate electrode overlaps the first active layer in an overlapping amount of about 2 μm to about 10 μm.

### Claim 11 (depends on 9)

The display device of claim 9, wherein the first source electrode is in contact with the first light shielding layer through a third contact hole passing through the first insulating layer and a buffer layer disposed between the first active layer and the first light shielding layer.

### Claim 12 (depends on 1)

The display device of claim 1, wherein a respective pixel of the pixels includes a second transistor configured to apply the data voltage of the respective data line of the data lines to the first transistor according to a scan signal applied to a respective scan line of the scan lines that is connected with the second transistor, and the second transistor includes a second active layer including an oxide semiconductor including indium (In).

### Claim 13 (depends on 12)

The display device of claim 12, wherein the second transistor further includes:
a second light shielding layer disposed below the second active layer; and
a second gate electrode disposed on the second active layer.

### Claim 14 (depends on 13)

The display device of claim 13, wherein the second gate electrode is in contact with the second light shielding layer through a sixth contact hole passing through a first gate insulating layer disposed between the second active layer and the second gate electrode and a buffer layer disposed between the second active layer and the second light shielding layer.

### Claim 15 (depends on 1)

The display device of claim 1, further comprising:
a scan driver configured to output a scan signal to a respective scan line of the scan lines,
wherein the scan driver includes a third transistor including a third active layer.

### Claim 16 (depends on 15)

The display device of claim 15, wherein the first active layer of the first transistor is disposed above the third active layer of the third transistor.

### Claim 17

A display device, comprising:
pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light emitting element, a driving transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from a respective data line of the data lines, and a switching transistor configured to apply the data voltage of the respective data line to the driving transistor according to a scan signal applied to a respective scan line of the scan lines,
the driving transistor and the switching transistor include an active layer including an oxide semiconductor containing indium (In), and
a content of the indium in the oxide semiconductor of the active layer is 70 at % or more.

### Claim 18 (depends on 17)

The display device of claim 17, wherein an amount of the indium (In) is greater than or equal to about 70 at %.

### Claim 19 (depends on 17)

The display device of claim 17, wherein the oxide semiconductor includes indium-tin oxide (ITO) or indium-tin-gallium oxide (ITGO).

### Claim 20 (depends on 19)

The display device of claim 19, wherein a sum of an amount of indium (In) and an amount of tin (Sn) in the oxide semiconductor is greater than or equal to about 95 at %.

### Claim 21 (depends on 19)

The display device of claim 19, wherein an oxygen atom concentration of an upper surface of the active layer of the driving transistor is higher than an oxygen atom concentration of a lower surface thereof.

### Claim 22 (depends on 19)

The display device of claim 19, wherein the driving transistor further includes a gate electrode disposed on the active layer, and an overlapping region of the gate electrode and the active layer has a length in a range of about 2 μm to about 10 μm.