# US 2020/0401248 A1 · Current-induced dark layer formation for metallization in electronic devices

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- Number: US 2020/0401248 A1
- Document ID: US20200401248A1
- Status: Published application
- Kind: A1
- Application number: 16/918,250
- Filed: 2020-07-01
- Published: 2020-12-24
- Earliest claimed: 2017-01-19
- Assignees: H.C. Starck GmbH
- Applicants: H.C. Starck Inc.
- Inventors: Helia JALILI; Francois DARY; Barbara COX
- Web page: https://patentgrep.com/patent/US20200401248A1

## CPC

- G06F 3/041: Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- C25D 11/022: {Anodisation on selected surface areas}
- G02F 1/13338: {Input devices, e.g. touch panels}
- G02F 1/136286: {Wiring, e.g. gate line, drain line}
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10W 20/032: {of conductive barrier, adhesion or liner layers}
- H10W 20/425: {Barrier, adhesion or liner layers}
- G02F 1/13629: {Multilayer wirings}
- G02F 1/136295: {Materials; Compositions; Manufacture processes}
- G06F 2203/04103: Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In various embodiments, bilayers are formed in electronic devices at least in part by anodization of metal-alloy base layers.

## Claims

### Claim at position 1

-10. (canceled)

### Claim 11

A method of forming a microelectronic device, the method comprising:
providing a substrate;
depositing over the substrate a base layer comprising an alloy of Cu and/or Mo with 0.5 weight %-50 weight % of one or more anodizable alloying elements selected from the list consisting of Ta, Nb, Al, Hf, Zr, Ti, and Mg;
anodizing the base layer to form a bilayer barrier layer comprising (i) a dielectric layer and (ii) a remaining portion of the base layer disposed beneath the dielectric layer; and
depositing a conductor layer over the barrier layer.

### Claim 12 (depends on 11)

The method of claim 11, wherein the dielectric layer comprises an oxide, nitride, or oxynitride of the one or more anodizable alloying elements.

### Claim 13 (depends on 11)

The method of claim 11, wherein anodizing the base layer comprises:
immersing the base layer in an electrolyte; and
applying a voltage between the base layer and a cathode.

### Claim 14 (depends on 13)

The method of claim 13, wherein the electrolyte comprises an acidic solution.

### Claim 15 (depends on 13)

The method of claim 13, wherein the electrolyte comprises sulfuric acid, nitric acid, chromic acid, and/or phosphoric acid.

### Claim 16 (depends on 13)

The method of claim 13, wherein the electrolyte comprises a basic solution.

### Claim 17 (depends on 13)

The method of claim 13, wherein the electrolyte comprises trisodium phosphate.

### Claim 18 (depends on 11)

The method of claim 11, wherein anodizing the base layer comprises applying an electrolyte to the base layer while applying a voltage thereto without immersing the base layer in the electrolyte.

### Claim 19 (depends on 18)

The method of claim 18, wherein the electrolyte is applied to the base layer using a brush electrode.

### Claim 20 (depends on 11)

The method of claim 11, wherein the base layer is anodized at room temperature.

### Claim 21 (depends on 11)

The method of claim 11, further comprising:
forming a mask layer over the conductor layer;
patterning the mask layer to reveal a portion of the conductor layer, a remaining portion of the mask layer at least partially defining a shape of an electrode; and
thereafter, removing portions of the conductor layer and the bilayer barrier layer not masked by the patterned mask layer.

### Claim 22 (depends on 11)

The method of claim 11, further comprising:
depositing over at least a portion of the conductor layer a second base layer comprising an alloy of Cu and/or Mo with 0.5 weight %-50 weight % of one or more second anodizable alloying elements selected from the list consisting of Ta, Nb, Al, Hf, Zr, Ti, and Mg; and
anodizing the second base layer to form a bilayer capping layer comprising (i) a second dielectric layer and (ii) a remaining portion of the second base layer disposed beneath the second dielectric layer.

### Claim 23 (depends on 22)

The method of claim 22, wherein the base layer comprises an alloy the same as that of the second base layer.

### Claim 24 (depends on 22)

The method of claim 22, wherein the base layer comprises an alloy different from that of the second base layer.

### Claim 25 (depends on 22)

The method of claim 22, wherein the second dielectric layer comprises an oxide, nitride, or oxynitride of the one or more second anodizable alloying elements.

### Claim at position 17

-35. (canceled)