# US 2020/0401044 A1 · Pattern-forming material, pattern-forming method, and monomer for pattern-forming material > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2020/0401044 A1 - Document ID: US20200401044A1 - Status: Published application - Kind: A1 - Application number: 16/975,609 - Filed: 2019-02-25 - Published: 2020-12-24 - Earliest claimed: 2018-02-26 - Assignees: Oji Holdings Corporation - Applicants: Oji Holdings Corporation - Inventors: Kazuyo MORITA; Kimiko HATTORI - Web page: https://patentgrep.com/patent/US20200401044A1 ## CPC - G03F 7/039: Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) - G03F 7/094: {Multilayer resist systems, e.g. planarising layers} - C08F 20/26: Esters containing oxygen in addition to the carboxy oxygen - C08F 220/14: Methyl esters {, e.g. methyl (meth)acrylate} - C08F 290/10: Polymers provided for in subclass C08B - C08F 297/02: using a catalyst of the anionic type - C09D 153/00: Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers - C09D 155/005: {Homopolymers or copolymers obtained by polymerisation of macromolecular compounds terminated by a carbon-to-carbon double bond} - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - G03F 7/0392: {the macromolecular compound being present in a chemically amplified positive photoresist composition} - G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain} - G03F 7/0757: {Macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence)} - G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} - G03F 7/40: Treatment after imagewise removal, e.g. baking - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) ## Abstract An object of the present invention is to provide a pattern-forming film having excellent etching resistance. The present invention relates to a pattern-forming material including a polymer containing oxygen atoms, in which the polymer has an oxygen atom content of 20% by mass or more with respect to the total mass of the polymer, and the polymer has a silicon atom content of 10% by mass or less with respect to the total mass of the polymer. ## Claims ### Claim 1 A pattern-forming material comprising a polymer containing oxygen atoms, wherein the polymer has an oxygen atom content of 20% by mass or more with respect to the total mass of the polymer, and the polymer has a silicon atom content of 10% by mass or less with respect to the total mass of the polymer. ### Claim 2 (depends on 1) The pattern-forming material according to claim 1, which is for metal introduction. ### Claim 3 (depends on 1) The pattern-forming material according to claim 1, wherein the polymer contains at least one selected from a unit derived from a sugar derivative and a unit derived from a (meth)acrylate. ### Claim 4 (depends on 1) The pattern-forming material according to claim 1, wherein the polymer contains a unit derived from a sugar derivative. ### Claim 5 (depends on 4) The pattern-forming material according to claim 4, wherein the sugar derivative is at least one selected from a pentose derivative and a hexose derivative. ### Claim 6 (depends on 1) The pattern-forming material according to claim 1, which further comprises an organic solvent. ### Claim 7 (depends on 1) The pattern-forming material according to claim 1, which is used for forming an underlayer film. ### Claim 8 (depends on 1) The pattern-forming material according to claim 1, which is used for forming a self-assembled film. ### Claim 9 (depends on 1) The pattern-forming material according to claim 1, which is used for forming a resist film. ### Claim 10 (depends on 1) A pattern-forming method, comprising: forming a pattern-forming film using the pattern-forming material according to claim 1; and removing a part of the pattern-forming film. ### Claim 11 (depends on 10) The pattern-forming method according to claim 10, comprising: introducing a metal into the pattern-forming film. ### Claim 12 A monomer for a pattern-forming material, which is represented by the following formula (1′) or the following formula (2′): wherein, in the formula (1′), each R independently represents a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, an alkyl group, an acyl group, an aryl group, a trimethylsilyl group, or a phosphoryl group, and a plurality of R1 may be the same or different; R′ represents a hydrogen atom, —OR11, or —NR12; R″ represents a hydrogen atom, —OR11, —COOR13, or —CH2OR13, provided that R11 represents a hydrogen atom, an alkyl group, an acyl group, an aryl group, a trimethylsilyl group, or a phosphoryl group, R12 represents a hydrogen atom, an alkyl group, a carboxyl group, or an acyl group, a plurality of R12 may be the same or different, and R represents a hydrogen atom, an alkyl group, an acyl group, an aryl group, a trimethylsilyl group, or a phosphoryl group; R5 represents a hydrogen atom or an alkyl group; and each Y1 independently represent a single bond or a linking group; wherein, in the formula (2′), each R201 independently represents a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, an alkyl group, an acyl group, an aryl group, a trimethylsilyl group, or a phosphoryl group, and a plurality of R201 may be the same or different; R′ represents a hydrogen atom, —OR11, or —NR122; and R″ represents a hydrogen atom, —OR11, —COOR13, or —CH2OR13, provided that R11 represents a hydrogen atom, an alkyl group, an acyl group, an aryl group, a trimethylsilyl group, or a phosphoryl group, R12 represents a hydrogen atom, an alkyl group, a carboxyl group, or an acyl group, a plurality of R12 may be the same or different, and R13 represents a hydrogen atom, an alkyl group, an acyl group, an aryl group, a trimethylsilyl group, or a phosphoryl group.