# US 2020/0401043 A1 · Pattern forming method and developer

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- Number: US 2020/0401043 A1
- Document ID: US20200401043A1
- Status: Published application
- Kind: A1
- Application number: 17/010,895
- Filed: 2020-09-03
- Published: 2020-12-24
- Earliest claimed: 2018-03-08
- Assignees: Jsr Corporation
- Applicants: Jsr Corporation
- Inventors: Ryo KAWAJIRI; Noboru OOTSUKA; Makoto SHIMIZU
- Web page: https://patentgrep.com/patent/US20200401043A1

## CPC

- G03F 7/038: Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021)
- G03F 7/325: {Non-aqueous compositions}
- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F 7/2041: {in the presence of a fluid, e.g. immersion; using fluid cooling means}
- G03F 7/32: Liquid compositions therefor, e.g. developers
- G03F 7/70025: {by lasers}
- H01S 3/225: comprising an excimer or exciplex
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A pattern forming method includes applying a photoresist composition onto a substrate to form a resist film. The resist film is exposed to an ArF excimer laser. The exposed resist film is developed with a developer. the photoresist composition includes a polymer and a radiation-sensitive acid generator. The polymer has a structural unit having an acid-dissociable group, does not have a phenolic hydroxyl group and exhibits decreased solubility in the developer by dissociation of the acid-dissociable group. The developer includes a nitrogen-containing compound, and the nitrogen-containing compound is at least one of: a condensed ring compound or bridged cyclic compound including at least two nitrogen atoms as ring-forming atoms, a compound having a nitrogen-containing aromatic heterocyclic structure and an acyclic tertiary amine structure in a molecule thereof, an onium salt compound represented by Formula (A-1), or a compound represented by Formula (A-2).

## Claims

### Claim 1

A pattern forming method comprising:
applying a photoresist composition onto a substrate to form a resist film;
exposing the resist film to an ArF excimer laser; and
developing the exposed resist film with a developer comprising an organic solvent, wherein
the photoresist composition comprises:
[A] a polymer that has a structural unit (I) having an acid-dissociable group to be dissociated by action of an acid, does not have a phenolic hydroxyl group and exhibits decreased solubility in the developer by dissociation of the acid-dissociable group; and
[B] a radiation-sensitive acid generator,
the developer comprises a nitrogen-containing compound, and
the nitrogen-containing compound is at least one of
(i) a condensed ring compound or bridged cyclic compound comprising at least two nitrogen atoms as ring-forming atoms,
(ii) a compound having a nitrogen-containing aromatic heterocyclic structure and an acyclic tertiary amine structure in a molecule thereof,
(iii) an onium salt compound represented by Formula (A-1), or
(iv) a compound represented by Formula (A-2):
wherein, in Formula (A-1), R1 is an aliphatic hydrocarbon group having 1 to 12 carbon atoms or a group obtained by substituting a part or all of hydrogen atoms contained in an aliphatic hydrocarbon group having 1 to 12 carbon atoms with a fluorine atom, R2 is an aliphatic hydrocarbon group having 1 to 12 carbon atoms, a branched hydrocarbon group having 3 to 12 carbon atoms, or an alicyclic hydrocarbon group having 3 to 18 carbon atoms, and Z+ is a monovalent onium cation,
wherein, in Formula (A-2), R3, R4, and R5 are each independently a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, or any one of R3 to R5 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms and remaining two of R3 to R5 are combined with each other to be a part of a 3 to 6-membered ring structure that is formed together with the nitrogen atom to which the remaining two of R3 to R5 are bonded, provided that the 3 to 6-membered ring is unsubstituted except the any one of R3 to R5, and that R3 to R5 are not all hydrogen atoms.

### Claim 2 (depends on 1)

The pattern forming method according to claim 1, wherein the nitrogen-containing compound is the condensed ring compound containing at least two nitrogen atoms as ring-forming atoms.

### Claim 3 (depends on 2)

The pattern forming method according to claim 2, wherein the condensed ring compound comprises two tertiary nitrogen atoms as ring-forming atoms, and
the two tertiary nitrogen atoms are directly bonded to each other or the two tertiary nitrogen atoms are bonded to each other via one carbon atom.

### Claim 4 (depends on 1)

The pattern forming method according to claim 1, wherein each ring that forms the condensed ring compound is a 6-membered or higher ring.

### Claim 5 (depends on 1)

The pattern forming method according to claim 1, wherein one of atoms forming a bond shared by rings to be condensed of the condensed ring compound is a nitrogen atom.

### Claim 6 (depends on 1)

The pattern forming method according to claim 1, wherein a ring-forming atom of the nitrogen-containing aromatic heterocyclic structure is directly bonded to a nitrogen atom of the acyclic tertiary amine structure.

### Claim 7 (depends on 1)

The pattern forming method according to claim 1, wherein a content of the nitrogen-containing compound in the developer is less than 0.1% by mass.

### Claim 8 (depends on 1)

The pattern forming method according to claim 1, wherein the organic solvent is at least one selected from the group consisting of an ether-based solvent, a ketone-based solvent, and an ester-based solvent.

### Claim 9

A developer which is capable of developing an exposed resist film, the developer comprising an organic solvent and a nitrogen-containing compound, wherein
the nitrogen-containing compound is at least one of
(i) a condensed ring compound or bridged compound comprising at least two nitrogen atoms as ring-forming atoms,
(ii) a compound having a nitrogen-containing aromatic heterocyclic structure and an acyclic tertiary amine structure in a molecule thereof,
(iii) an onium salt compound represented by Formula (A-1), or
(iv) a compound represented by Formula (A-2):
wherein, in Formula (A-1), R1 is an aliphatic hydrocarbon group having 1 to 12 carbon atoms or a group obtained by substituting a part or all of hydrogen atoms contained in an aliphatic hydrocarbon group having 1 to 12 carbon atoms with a fluorine atom, R2 is an aliphatic hydrocarbon group having 1 to 12 carbon atoms, a branched hydrocarbon group having 3 to 12 carbon atoms, or an alicyclic hydrocarbon group having 3 to 18 carbon atoms, and Z is a monovalent onium cation,
wherein, in Formula (A-2), R3, R4, and R5 are each independently a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, or any one of R3 to R5 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms and remaining two of R3 to R5 are combined with each other to be a part of a 3 to 6-membered ring structure that is formed together with the nitrogen atom to which the remaining two of R3 to R5 are bonded, provided that the 3 to 6-membered ring is unsubstituted except the any one of R3 to R5, and that R3 to R5 are not all hydrogen atoms.

### Claim 10 (depends on 9)

The developer according to claim 9, wherein a content of the nitrogen-containing compound in the developer is less than 0.1% by mass.

### Claim 11 (depends on 9)

The developer according to claim 9, wherein the condensed ring compound comprises two tertiary nitrogen atoms as ring-forming atoms, and
the two tertiary nitrogen atoms are directly bonded to each other or the two tertiary nitrogen atoms are bonded to each other via one carbon atom.
