# US 2020/0401036 A1 · Mask and Method for preparing a Mask > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2020/0401036 A1 - Document ID: US20200401036A1 - Status: Published application - Kind: A1 - Application number: 16/959,190 - Filed: 2018-08-28 - Published: 2020-12-24 - Earliest claimed: 2018-01-17 - Assignees: Beijing Boe Display Technology Co., Ltd.; Boe Technology Group Co., Ltd. - Applicants: Beijing Boe Display Technology Co., Ltd.; BOE Technology Group Co., Ltd. - Inventors: Jinchao Bai; Huibin Guo; Mingxuan LIU; Xiao Han; Xiangqian Ding; Yongzhi Song - Web page: https://patentgrep.com/patent/US20200401036A1 ## CPC - G03F 1/26: Phase shift masks [PSM]; PSM blanks; Preparation thereof - G03F 1/50: Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A mask and a method for preparing the mask are provided in embodiments of the present disclosure. The mask includes: a substrate; and at least one first photo-resistance structure and at least one second photo-resistance structure on the substrate; the first photo-resistance structure includes a first light shielding film layer and an optical filter film layer, and the optical filter film layer includes a first optical filter portion whose orthographic projection on the substrate is located out of an edge of an orthographic projection of the first light shielding film layer on the substrate and adjoins the edge of the orthographic projection of the first light shielding film layer on the substrate; and the second photo-resistance structure merely includes a second light shielding film layer. ## Claims ### Claim 1 A mask, comprising: a substrate; and at least one first photo-resistance structure and at least one second photo-resistance structure on the substrate; wherein the first photo-resistance structure comprises a first light shielding film layer and an optical filter film layer, and the optical filter film layer comprises a first optical filter portion whose orthographic projection on the substrate is located out of an edge of an orthographic projection of the first light shielding film layer on the substrate and adjoins the edge of the orthographic projection of the first light shielding film layer on the substrate; and the second photo-resistance structure comprises a second light shielding film layer. ### Claim 2 (depends on 1) The mask according to claim 1, wherein the first optical filter portion is arranged to adjoin the first light shielding film layer in a thickness direction of the first light shielding film layer or in a direction perpendicular to the thickness direction of the first light shielding film layer. ### Claim 3 (depends on 1) The mask according to claim 1, wherein the orthographic projection of the first light shielding film layer on the substrate is surrounded by or contained within the orthographic projection of the optical filter film layer on the substrate. ### Claim 4 (depends on 3) The mask according to claim 3, wherein the optical filter film layer is located between the substrate and the first light shielding film layer. ### Claim 5 (depends on 3) The mask according to claim 3, wherein the optical filter film layer further comprises: a second optical filter portion on a side of the first light shielding film layer which side faces away from the substrate. ### Claim 6 (depends on 1) The mask according to claim 1, wherein the first photo-resistance structure is configured to form metal lines therein and the second photo-resistance structure is configured to form channels therein. ### Claim 7 (depends on 1) The mask according to claim 1, wherein both the material by which the first light shielding film layer is formed and the material by which the second light shielding film layer is formed comprise a material composition of chromium molybdenum oxide. ### Claim 8 A method for preparing a mask, the method comprising: forming a pattern of a first photo-resistance structure and a pattern of a second photo-resistance structure on a substrate; wherein the first photo-resistance structure comprises a first light shielding film layer and an optical filter film layer, the optical filter film layer comprises a first optical filter portion whose orthographic projection on the substrate is located out of an edge of an orthographic projection of the first light shielding film layer on the substrate and adjoins the edge of the orthographic projection of the first light shielding film layer on the substrate; and the second photo-resistance structure comprises a second light shielding film layer. ### Claim 9 (depends on 8) The method according to claim 8, wherein the forming the pattern of the first photo-resistance structure and the pattern of the second photo-resistance structure on the substrate comprises: forming a pattern of the first light shielding film layer and a pattern of the second light shielding film layer on the substrate by using one patterning process; and forming a pattern of the optical filter film layer on the substrate by using another patterning process, wherein a pattern of the first optical filter portion of the optical filter film layer adjoins the first light shielding film layer in thickness direction of the first light shielding film layer or in a direction perpendicular to the thickness direction of the first light shielding film layer. ### Claim 10 (depends on 8) The method according to claim 8, wherein the orthographic projection of the first light shielding film layer on the substrate is surrounded by or contained within the orthographic projection of the optical filter film layer on the substrate. ### Claim 11 (depends on 8) The method according to claim 8, wherein the forming the pattern of the first photo-resistance structure and the pattern of the second photo-resistance structure on the substrate comprises: forming a pattern of the first light shielding film layer and a pattern of the second light shielding film layer on the substrate by using one patterning process; and forming a pattern of the optical filter film layer on a side of the first light shielding film layer which side faces away from the substrate by using another patterning process, wherein the pattern of the optical filter film layer further comprises: a second optical filter portion covering a side of the first light shielding film layer which side faces away from the substrate. ### Claim 12 (depends on 8) The method according to claim 8, wherein the forming the pattern of the first photo-resistance structure and the pattern of the second photo-resistance structure on the substrate comprises: forming a pattern of the optical filter film layer on the substrate by using one patterning process; and forming a pattern of the first light shielding film layer on a side of the optical filter film layer which side faces away from the substrate, while forming a pattern of the second light shielding film layer on a portion of the substrate which portion is not covered by the optical filter film layer, by using another patterning process. ### Claim 13 (depends on 8) The method according to claim 8, wherein the first photo-resistance structure is configured to form metal lines therein, and the second photo-resistance structure is configured to form channels therein. ### Claim 14 (depends on 8) The method according to claim 8, wherein both the material by which the first light shielding film layer is formed and the material by which the second light shielding film layer is formed comprise a material composition of chromium molybdenum oxide. ### Claim 15 (depends on 2) The mask according to claim 2, wherein both the material by which the first light shielding film layer is formed and the material by which the second light shielding film layer is formed comprise a material composition of chromium molybdenum oxide. ### Claim 16 (depends on 3) The mask according to claim 3, wherein both the material by which the first light shielding film layer is formed and the material by which the second light shielding film layer is formed comprise a material composition of chromium molybdenum oxide. ### Claim 17 (depends on 9) The method according to claim 9, wherein both the material by which the first light shielding film layer is formed and the material by which the second light shielding film layer is formed comprise a material composition of chromium molybdenum oxide. ### Claim 18 (depends on 10) The method according to claim 10, wherein both the material by which the first light shielding film layer is formed and the material by which the second light shielding film layer is formed comprise a material composition of chromium molybdenum oxide. ### Claim 19 (depends on 11) The method according to claim 11, wherein both the material by which the first light shielding film layer is formed and the material by which the second light shielding film layer is formed comprise a material composition of chromium molybdenum oxide. ### Claim 20 (depends on 12) The method according to claim 12, wherein both the material by which the first light shielding film layer is formed and the material by which the second light shielding film layer is formed comprise a material composition of chromium molybdenum oxide.