# US 2020/0399770 A1 · Metal mask substrate for vapor deposition, metal mask for vapor deposition, production method for metal mask substrate for vapor deposition, and production method for metal mask for vapor deposition

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- Number: US 2020/0399770 A1
- Document ID: US20200399770A1
- Status: Published application
- Kind: A1
- Application number: 17/013,535
- Filed: 2020-09-04
- Published: 2020-12-24
- Earliest claimed: 2015-07-17
- Assignees: Toppan Printing Co., Ltd.
- Applicants: Toppan Printing Co., Ltd.
- Inventors: Sumika TAMURA; Mikio SHINNO; Daisei FUJITO; Kiyoaki NISHITSUJI; Takehiro NISHI; Naoko MIKAMI
- Web page: https://patentgrep.com/patent/US20200399770A1

## CPC

- C23C 14/042: {using masks}
- C25B 11/055: characterised by the substrate or carrier material
- C25C 1/08: of nickel or cobalt
- C25C 7/08: Separating of deposited metals from the cathode
- C25D 1/00: Electroforming
- C25D 1/04: Wires; Strips; Foils
- C25D 1/10: Moulds; Masks; Masterforms
- C25D 11/34: of metals or alloys not provided for in groups C25D11/04 - C25D11/32
- C25D 3/562: {containing more than 50% by weight of iron or nickel or cobalt}
- H10K 71/166: {using selective deposition, e.g. using a mask}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C25B: ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR (anodic or cathodic protection C23F13/00; single-crystal growth C30B)
- C25C: PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A vapor deposition metal mask substrate includes a nickel-containing metal sheet including a obverse surface and a reverse surface, which is opposite to the obverse surface. At least one of the obverse surface and the reverse surface is a target surface for placing a resist layer. The target surface has a surface roughness Sa of less than or equal to 0.019 μm. The target surface has a surface roughness Sz of less than or equal to 0.308 μm.

## Claims

### Claim 1

A vapor deposition metal mask substrate comprising a nickel-containing metal sheet including an obverse surface and a reverse surface, which is opposite to the obverse surface, wherein
at least one of the obverse surface and the reverse surface is a target surface for placing a resist layer,
the target surface has a surface roughness Sa of less than or equal to 0.019 μm, and
the target surface has a surface roughness Sz of less than or equal to 0.308 μm.

### Claim 2 (depends on 1)

The vapor deposition metal mask substrate according to claim 1, wherein a specular reflectance of incident light to the target surface is between 53.0% and 97.0%, inclusive.

### Claim 3 (depends on 2)

The vapor deposition metal mask substrate according to claim 2, wherein
two directions that are perpendicular to each other in the target surface are directions in which light is incident as viewed facing the target surface, and
a difference in the reflectance between the two directions is less than or equal to 3.6%.

### Claim 4

A vapor deposition metal mask substrate comprising a nickel-containing metal sheet including an obverse surface and a reverse surface, which is opposite to the obverse surface, wherein
at least one of the obverse surface and the reverse surface is a target surface for placing a resist layer, and
a specular reflectance of incident light to the target surface is between 53.0% and 97.0%, inclusive.

### Claim 5 (depends on 4)

The vapor deposition metal mask substrate according to claim 4, wherein
two directions that are perpendicular to each other in the target surface are directions in which light is incident as viewed facing the target surface, and
a difference in the reflectance between the two directions is less than or equal to 3.6%.

### Claim 6 (depends on 1)

The vapor deposition metal mask substrate according to claim 1, wherein the nickel-containing metal sheet is an invar sheet.

### Claim 7

A method for manufacturing a vapor deposition metal mask substrate, the method comprising:
forming a nickel-containing metal sheet on an electrode surface by electrolysis; and
separating the nickel-containing metal sheet from the electrode surface, wherein
the nickel-containing metal sheet includes an obverse surface and a reverse surface, which is opposite to the obverse surface,
at least one of the obverse surface and the reverse surface is a target surface for placing a resist layer, and
the electrolysis causes the target surface to have a surface roughness Sa of less than or equal to 0.019 μm and causes the target surface to have a surface roughness Sz of less than or equal to 0.308 μm.

### Claim 8

A method for manufacturing a vapor deposition metal mask substrate, the method comprising:
forming a nickel-containing metal sheet on an electrode surface by electrolysis; and
separating the nickel-containing metal sheet from the electrode surface, wherein
the nickel-containing metal sheet includes an obverse surface and a reverse surface, which is opposite to the obverse surface,
at least one of the obverse surface and the reverse surface is a target surface for placing a resist layer, and
the electrolysis causes a specular reflectance of incident light to the target surface to be between 53.0% and 97.0%, inclusive.