# US 2020/0399757 A1 · Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2020/0399757 A1 - Document ID: US20200399757A1 - Status: Published application - Kind: A1 - Application number: 17/012,867 - Filed: 2020-09-04 - Published: 2020-12-24 - Earliest claimed: 2018-03-22 - Assignees: Kokusai Electric Corporation - Applicants: Kokusai Electric Corporation - Inventors: Daisuke HARA; Takashi YAHATA; Kenji SHINOZAKI; Kazuhiko YAMAZAKI - Web page: https://patentgrep.com/patent/US20200399757A1 ## CPC - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - C23C 16/345: {Silicon nitride} - C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species - C23C 16/45525: {Atomic layer deposition [ALD]} - C23C 16/45542: {Plasma being used non-continuously during the ALD reactions} - C23C 16/45546: {specially adapted for a substrate stack in the ALD reactor} - C23C 16/45557: {Pulsed pressure or control pressure} - C23C 16/45561: {Gas plumbing upstream of the reaction chamber} - C23C 16/45578: {Elongated nozzles, tubes with holes} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane} - H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz} - H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)} - H10P 72/0434: {mainly by convection} - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a first gas supply system configured to supply a first gas onto the substrate in the process chamber and including a plurality of tanks configured to store the first gas, wherein the first gas is heated in the plurality of the tanks; and a controller configured to control the first gas supply system such that the first gas is supplied onto the substrate in the process chamber while switching among the plurality of the tanks. ## Claims ### Claim 1 A substrate processing apparatus comprising: a process chamber in which a substrate is processed; a first gas supply system configured to supply a first gas onto the substrate in the process chamber and comprising a plurality of tanks configured to store the first gas, wherein the first gas is heated in the plurality of the tanks; and a controller configured to control the first gas supply system such that the first gas is supplied onto the substrate in the process chamber while switching among the plurality of the tanks. ### Claim 2 (depends on 1) The substrate processing apparatus of claim 1, wherein the first gas supply system further comprises: pressure meters configured to measure inner pressures of the plurality of the tanks, respectively, wherein the controller is further configured to control the first gas supply system such that the first gas is supplied onto the substrate in the process chamber while switching among the plurality of the tanks based on pressure values measured by the pressure meters. ### Claim 3 (depends on 2) The substrate processing apparatus of claim 2, wherein the controller is further configured to switch among the plurality of the tanks based on pressure values measured by the pressure meters while supplying the first gas. ### Claim 4 (depends on 1) The substrate processing apparatus of claim 1, wherein volumes of the tanks are equal to one another. ### Claim 5 (depends on 1) The substrate processing apparatus of claim 1, wherein volumes of the tanks are different from one another. ### Claim 6 (depends on 1) The substrate processing apparatus of claim 1, wherein the first gas supply system further comprises: a mass flow controller connected to the plurality of the tanks and configured to control a supply flow rate of the first gas supplied into the process chamber. ### Claim 7 (depends on 6) The substrate processing apparatus of claim 6, wherein the first gas supply system further comprises: valves configured to control a supply of the first gas and provided at the plurality of the tanks, respectively, and pressure meters configured to measure inner pressures of the plurality of the tanks, respectively, wherein the controller is configured to supply the first gas by controlling opening and closing of the valves and switching among the plurality of the tanks based on pressure values measured by the pressure meters while supplying the first gas. ### Claim 8 (depends on 1) The substrate processing apparatus of claim 1, further comprising: a second gas supply system configured to supply a second gas onto the substrate in the process chamber, wherein the first gas comprises a source gas, and the second gas comprises a reactive gas. ### Claim 9 (depends on 8) The substrate processing apparatus of claim 8, further comprising: a third gas supply system configured to supply a third gas onto the substrate in the process chamber, wherein the third gas comprises an inert gas. ### Claim 10 (depends on 8) The substrate processing apparatus of claim 8, further comprising: a plasma generator provided in the process chamber in a vertical direction and configured to activate the reactive gas by plasma. ### Claim 11 (depends on 10) The substrate processing apparatus of claim 10, wherein the plasma generator comprises: a plurality of first rod-shaped electrodes connected to a high frequency power supply; and a second rod-shaped electrode grounded. ### Claim 12 (depends on 11) The substrate processing apparatus of claim 11, wherein the plasma generator is configured to activate the reactive gas by the plurality of the first rod-shaped electrodes and the second rod-shaped electrode. ### Claim 13 (depends on 1) The substrate processing apparatus of claim 1, further comprising: a substrate support configured to support a plurality of substrates comprising the substrate in a vertical direction in a multistage manner. ### Claim 14 A method of manufacturing a semiconductor device comprising: (a) loading a substrate into a process chamber of a substrate processing apparatus comprising: the process chamber in which the substrate is processed; a first gas supply system configured to supply a first gas onto the substrate in the process chamber and comprising a plurality of tanks configured to store the first gas, wherein the first gas is heated in the plurality of the tanks; and a second gas supply system configured to supply a second gas onto the substrate in the process chamber; (b) supplying the first gas onto the substrate in the process chamber through the first gas supply system while switching among the plurality of the tanks; and (c) supplying the second gas onto the substrate in the process chamber through the second gas supply system. ### Claim 15 (depends on 14) The method of claim 14, wherein the substrate processing further comprises pressure meters configured to measure inner pressures of the plurality of the tanks, respectively, wherein the first gas is supplied onto the substrate in the process chamber in (b) while switching among the plurality of the tanks based on pressure values measured by the pressure meters. ### Claim 16 (depends on 14) The method of claim 14, wherein the substrate processing further comprises a plasma generator configured to activate the second gas by plasma, wherein the second gas activated by the plasma generator is supplied onto the substrate in the process chamber in (c). ### Claim 17 A non-transitory computer-readable recording medium storing a program related to a substrate processing apparatus comprising: a process chamber in which a substrate is processed; a first gas supply system configured to supply a first gas onto the substrate in the process chamber and comprising a plurality of tanks configured to store the first gas, wherein the first gas is heated in the plurality of the tanks; and a second gas supply system configured to supply a second gas onto the substrate in the process chamber, wherein the program cases, by a computer, the substrate processing apparatus to perform: (a) loading the substrate into the process chamber of the substrate processing apparatus; (b) supplying the first gas onto the substrate in the process chamber through the first gas supply system while switching among the plurality of the tanks; and (c) supplying the second gas onto the substrate in the process chamber through the second gas supply system. ### Claim 18 (depends on 17) The non-transitory computer-readable recording medium of claim 17, wherein the substrate processing further comprises pressure meters configured to measure inner pressures of the plurality of the tanks, respectively, wherein the first gas is supplied onto the substrate in the process chamber in (b) while switching among the plurality of the tanks based on pressure values measured by the pressure meters. ### Claim 19 (depends on 17) The non-transitory computer-readable recording medium of claim 17, wherein the substrate processing further comprises a plasma generator configured to activate the second gas by plasma, wherein the second gas activated by the plasma generator is supplied onto the substrate in the process chamber in (c).