# US 2020/0399756 A1 · Pecvd process

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- Number: US 2020/0399756 A1
- Document ID: US20200399756A1
- Status: Published application
- Kind: A1
- Application number: 17/011,853
- Filed: 2020-09-03
- Published: 2020-12-24
- Earliest claimed: 2012-10-26
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Nagarajan RAJAGOPALAN; Xinhai HAN; Michael Wenyoung TSIANG; Masaki OGATA; Zhijun JIANG; Juan Carlos ROCHA-ALVAREZ; Thomas NOWAK; Jianhua ZHOU; Ramprakash SANKARAKRISHNAN; Amit Kumar BANSAL; Jeongmin LEE; Todd EGAN; Edward BUDIARTO; Dmitriy PANASYUK; Terrance Y. LEE; Jian J. CHEN; Mohamad A. AYOUB; Heung Lak PARK; Patrick REILLY; Shahid SHAIKH; Bok Hoen KIM; Sergey STARIK; Ganesh BALASUBRAMANIAN
- Web page: https://patentgrep.com/patent/US20200399756A1

## CPC

- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- C23C 16/45565: {Shower nozzles}
- C23C 16/4557: {Heated nozzles}
- C23C 16/458: characterised by the method used for supporting substrates in the reaction chamber
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- C23C 16/505: using radio frequency discharges
- C23C 16/509: using internal electrodes
- C23C 16/5096: {Flat-bed apparatus}
- G01B 11/0625: {with measurement of absorption or reflection}
- G01B 11/0683: {measurement during deposition or removal of the layer}
- G01N 21/55: Specular reflectivity
- G01N 21/658: {enhancement Raman, e.g. surface plasmons}
- H10P 72/0602: {Temperature monitoring}
- H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring}
- H10P 72/76: using mechanical means, e.g. clamps or pinches
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- G01N 2201/1222: Endpoint determination; reaction time determination
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G01B: MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

## Claims

### Claim 1

An apparatus for processing a substrate, comprising:
a chamber comprising a side wall and a floor;
a lid assembly coupled to the side wall of the chamber, the side wall, floor, and lid defining an internal volume of the chamber, the lid assembly comprising:
a gas distributor having a plurality of gas flow openings formed therethrough; and
an electrode between the gas distributor and the side wall, the
electrode coupled to a first tuning circuit; and
an isolator that contacts the electrode and separates the electrode electrically and thermally from the gas distributor.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the first turning circuit comprises:
an electronic sensor;
an electronic controller, wherein the electronic controller is a variable capacitor;
a first inductor in series with the electronic controller; and
a second inductor in parallel with the electronic controller.

### Claim 3 (depends on 1)

The apparatus of claim 1, wherein the electrode is a ring electrode.

### Claim 4 (depends on 1)

The apparatus of claim 1, wherein the electrode is a continuous loop around a circumference of the chamber surrounding the internal volume.

### Claim 5 (depends on 1)

The apparatus of claim 1, wherein the electrode is a perforated electrode.

### Claim 6 (depends on 1)

The apparatus of claim 1, wherein the electrode is a plate electrode.

### Claim 7 (depends on 1)

The apparatus of claim 1, further comprising a second electrode coupled to the substrate support.

### Claim 8 (depends on 7)

The apparatus of claim 7, further comprising a third electrode coupled to the substrate support.

### Claim 9 (depends on 1)

The apparatus of claim 1, wherein the isolator comprises a dielectric material.

### Claim 10

An apparatus for processing a substrate, comprising:
a chamber body comprising a side wall and a floor;
a lid assembly coupled to the side wall of the chamber, wherein the side wall, floor, and lid define an internal volume of the chamber, and wherein the lid assembly comprises:
a gas distributor having a plurality of gas flow openings formed therethrough; and
an electrode disposed adjacent to the chamber body and separating the chamber body from the other components of the lid assembly, the electrode coupled to a first tuning circuit comprising an electronic sensor and an electronic controller.

### Claim 11 (depends on 10)

The apparatus of claim 10, further comprising:
a zoned blocker plate that contacts the gas distributor and provides multiple gas pathways therethrough, the zoned blocker plate comprising:
a first zoned plate; and
a second zoned plate.

### Claim 12 (depends on 11)

The apparatus of claim 11, further comprising an isolator that contacts the electrode and separates the electrode electrically and thermally from the gas distributor.

### Claim 13 (depends on 12)

The apparatus of claim 12, wherein the electrode is a ring electrode.

### Claim 14 (depends on 12)

The apparatus of claim 12, wherein the electrode is a perforated electrode.

### Claim 15 (depends on 12)

The apparatus of claim 12, wherein the electrode is a plate electrode.

### Claim 16

An apparatus for processing a substrate, comprising:
a chamber body comprising a side wall and a floor;
a lid coupled to the side wall of the chamber body, wherein the side wall, floor, and lid define an internal volume of a chamber, and wherein the lid comprises:
a gas distributor having a plurality of gas flow openings formed therethrough; and
an electrode disposed in the side wall; and
a zoned blocker plate that contacts the gas distributor and provides multiple gas pathways, the zoned blocker plate comprising:
a first zoned plate; and
a second zoned plate.

### Claim 17 (depends on 16)

The apparatus of claim 16, further comprising an isolator that contacts the electrode and separates the electrode electrically and thermally from the gas distributor and from the chamber body.

### Claim 18 (depends on 16)

The apparatus of claim 16, wherein the electrode is a ring electrode.

### Claim 19 (depends on 16)

The apparatus of claim 16, wherein the electrode is a perforated electrode.

### Claim 20 (depends on 16)

The apparatus of claim 16, wherein the electrode is a plate electrode.